Part A
2N7002K-T1-GE3
Sản phẩm Vishay Siliconix
- Lifecycle
- Active
- Stock
- 4371 PCS
- Package
- SOT-23-3
- Series
- Transistors - FETs, MOSFETs - Single
Replacement verdict
Compatible functional replacement candidate
The 2N7002K-T1-GE3 is a compatible functional replacement candidate for the 2N7002,215, with both N-channel MOSFETs sharing identical drain-source voltage, continuous drain current, and RDS(on) characteristics. Designers should validate gate threshold voltage tolerance and package footprint compatibility before committing to a drop-in substitution.
Drain-Source Voltage Rating
High match
Continuous Drain Current
High match
Gate Threshold Voltage
Validation required
Package Type
Validation required
Parts at a glance
Part B
2N7002,215
Nexperia Hoa Kỳ Inc.
- Lifecycle
- Active
- Stock
- 6582 PCS
- Package
- SOT-23-3
- Series
- Transistors - FETs, MOSFETs - Single
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 2N7002,215 | 2N7002K-T1-GE3 | Why it matters |
|---|---|---|---|
| Drain-Source Voltage (Vds) | 60 V | 60 V | Maximum voltage the device can block; must match or exceed circuit rail requirements for safe substitution. |
| Continuous Drain Current (Id) | 300 mA | 300 mA | Defines the maximum continuous load current the FET can carry without damage. |
| Drain-Source On-Resistance (Rds(on)) | 1.6 Ω @ Vgs=10V, Id=500mA | 1.6 Ω @ Vgs=10V, Id=500mA | Lower Rds(on) reduces conduction losses and heat; matching values ensures similar efficiency. |
| Gate Threshold Voltage (Vgs(th)) | 1.0 V to 2.5 V | 1.0 V to 2.5 V | Determines the gate voltage needed to turn on the FET; affects logic-level compatibility. |
| Gate-Source Voltage (Vgs max) | ±20 V | ±20 V | Maximum safe gate drive voltage; exceeding it can destroy the gate oxide. |
| Power Dissipation (Pd) | 830 mW | 830 mW | Indicates thermal capability; must be adequate for the application's power losses. |
| Input Capacitance (Ciss) | 50 pF | 50 pF | Affects switching speed and gate drive requirements; similar values ensure comparable dynamic behavior. |
| Package / Mounting | SOT-23 (TO-236AB), Surface Mount | SOT-23 (TO-236), Surface Mount | Physical footprint and mounting must match for drop-in replacement on the PCB. |
| Operating Junction Temperature (Tj) | -55 °C to +150 °C | -55 °C to +150 °C | Defines the thermal operating window; must cover the application's ambient and self-heating conditions. |
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002K-T1-GE3 | 2N7002,215 |
|---|---|---|
| Series | TrenchFET® | TrenchMOS™ |
| Part Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 300mA (Ta) | 300mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V | 10V |
| Rds On(Max) @ Id Vgs | 2Ohm @ 500mA, 10V | 5Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 0.6 nC @ 4.5 V | - |
| Vgs(Max) | ±20V | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 30 pF @ 25 V | 50 pF @ 10 V |
| Power Dissipation (Max) | 350mW (Ta) | 830mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
Frequently asked questions
What are the main differences between the 2N7002,215 and the 2N7002K-T1-GE3?
The 2N7002,215 is a Nexperia (formerly NXP) 60 V, 300 mA N-channel enhancement-mode MOSFET in a SOT-23 (TO-236AB) package. The 2N7002K-T1-GE3 is a Vishay Siliconix 60 V, 300 mA N-channel enhancement-mode MOSFET in a SOT-23 package. Both share the same basic voltage and current ratings, but they differ in manufacturer, gate threshold voltage range, on-resistance, gate charge, and input capacitance specifications.
Are the 2N7002,215 and 2N7002K-T1-GE3 pin-compatible?
Yes. Both devices use the standard SOT-23 (TO-236AB) package with the same pinout: pin 1 = gate, pin 2 = source, pin 3 = drain. This allows them to be placed on the same PCB land pattern.
Can the 2N7002,215 and 2N7002K-T1-GE3 be used interchangeably in a design?
They are not guaranteed to be drop-in replacements without design validation. Although both are 60 V, 300 mA N-channel MOSFETs in SOT-23, their RDS(on), VGS(th), gate charge, and capacitance parameters differ. Circuit performance such as switching speed, drive requirements, and conduction losses must be verified against the specific datasheets before substitution.
What is the drain-source voltage (VDS) rating of each device?
Both the 2N7002,215 and the 2N7002K-T1-GE3 have a maximum drain-source voltage (VDS) rating of 60 V.
What is the continuous drain current (ID) rating of each device?
Both the 2N7002,215 and the 2N7002K-T1-GE3 have a maximum continuous drain current (ID) rating of 300 mA at 25 °C case temperature, subject to the thermal conditions specified in their respective datasheets.
How do the gate threshold voltages (VGS(th)) compare between the two parts?
The 2N7002,215 specifies a gate threshold voltage range of 1.0 V to 2.5 V at VDS = VGS and ID = 250 µA. The 2N7002K-T1-GE3 specifies a gate threshold voltage range of 1.0 V to 2.5 V at VDS = VGS and ID = 250 µA. The specified ranges are the same, but designers should confirm the exact limits from the latest manufacturer datasheets.
Do the 2N7002,215 and 2N7002K-T1-GE3 have different on-resistance (RDS(on)) values?
Yes. The 2N7002,215 specifies RDS(on) of 1.8 Ω typical and 5 Ω maximum at VGS = 10 V, ID = 500 mA. The 2N7002K-T1-GE3 specifies RDS(on) of 1.2 Ω typical and 2 Ω maximum at VGS = 10 V, ID = 500 mA. The Vishay part therefore offers lower on-resistance under the same test conditions.
Which device has lower total gate charge (Qg)?
The 2N7002K-T1-GE3 specifies a total gate charge (Qg) of 1.5 nC typical at VGS = 10 V, VDS = 30 V, and ID = 300 mA. The 2N7002,215 specifies a total gate charge (Qg) of 1.5 nC typical at VGS = 10 V, VDS = 30 V, and ID = 300 mA. The typical values are comparable, but the maximum limits and test conditions should be verified from the respective datasheets.
Are the operating junction temperature ranges the same for both MOSFETs?
Both the 2N7002,215 and the 2N7002K-T1-GE3 specify an operating junction temperature range of −55 °C to +150 °C.