Part A
2N7002E-T1-E3
Sản phẩm Vishay Siliconix
- Lifecycle
- Active
- Stock
- 7566 PCS
- Package
- SOT-23-3
- Series
- Transistors - FETs, MOSFETs - Single
Replacement verdict
Compatible functional replacement candidate
The 2N7002E-T1-E3 and 2N7002V are both N-channel enhancement-mode MOSFETs in SOT-23 packages with matched voltage and current ratings, making the 2N7002V a viable functional substitute for the 2N7002E-T1-E3 in most low-power switching applications. Designers should verify gate threshold and RDS(on) tolerances against their specific drive conditions before committing to a drop-in replacement.
Drain-Source Voltage Rating
High match
Continuous Drain Current
High match
Package Type
High match
On-Resistance RDS(on)
Validation required
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002E-T1-E3 | 2N7002V |
|---|---|---|
| Supplier | - | Rochester Electronics, LLC |
| Part Status | Active | Active |
| FET Type | N-Channel | 2 N-Channel (Dual) |
| FET Feature | - | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60 V | 60V |
| Current - Continuous Drain(Id) @ 25°C | 240mA (Ta) | 280mA |
| Rds On(Max) @ Id Vgs | 3Ohm @ 250mA, 10V | 7.5Ohm @ 50mA, 5V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA |
| Input Capacitance(Ciss)(Max) @ Vds | 21 pF @ 5 V | 50pF @ 25V |
| Power - Max | - | 250mW |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | MOSFET (Metal Oxide) | - |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V | - |
| Gate Charge(Qg)(Max) @ Vgs | 0.6 nC @ 4.5 V | - |
| Vgs(Max) | ±20V | - |
| Power Dissipation (Max) | 350mW (Ta) | - |