Part A
APT30DQ120BG
Công nghệ Microchip
- Lifecycle
- Active
- Stock
- 2721 PCS
- Package
- TO-247-2
- Series
- Diodes - Rectifiers - Single
Replacement verdict
Not a drop-in replacement
The APT30DQ120BG and APT30GP60LDLG are not drop-in replacements for one another. Although both are 30 A-class fast-recovery diodes in TO-247 packages, they differ fundamentally in device technology, reverse voltage rating, forward voltage characteristics, and reverse recovery behavior, so each must be validated against the target circuit's voltage margin, switching frequency, and thermal design before any substitution is considered.
Different diode technology
Different reverse voltage rating
Different forward voltage drop
Different reverse recovery behavior
Parts at a glance
Part B
APT30GP60LDLG
Tập đoàn Microsemi
- Lifecycle
- Active
- Stock
- 2964 PCS
- Package
- TO-264-3
- Series
- Transistors - IGBTs - Single
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | APT30DQ120BG | APT30GP60LDLG | Why it matters |
|---|---|---|---|
| Device Type | Fast Recovery Epitaxial Diode (FRED) | Insulated Gate Bipolar Transistor (IGBT) | These are fundamentally different device families; a diode cannot substitute for a switching transistor in most circuits. |
| Package / Mounting | TO-247 (through-hole) | TO-264 (through-hole) | Different package footprints require different PCB layouts and heatsink mounting, affecting drop-in compatibility. |
| Collector/Anode Current Rating | 30 A (forward current) | 60 A (collector current at 25°C) | Current handling capability determines whether the part can carry the load current without overheating. |
| Voltage Rating (Vrrm / Vces) | 1200 V (repetitive peak reverse voltage) | 600 V (collector-emitter voltage) | Voltage rating must exceed the maximum circuit voltage with margin; the diode offers twice the blocking voltage. |
| Forward Voltage / Vce(on) | ~3.0 V forward voltage drop | ~1.8 V Vce(on) typical | Conduction losses differ significantly; the IGBT has lower on-state drop, affecting efficiency and thermal design. |
| Switching Behavior | Uncontrolled (diode, no gate) | Gate-controlled switching (IGBT) | A diode conducts passively while an IGBT requires gate drive circuitry, so they serve different functional roles. |
| Gate Charge / Drive Requirement | None (no gate) | Requires gate charge and gate drive | The IGBT needs a gate driver and control signal, which the diode does not, impacting circuit complexity. |
| Reverse Recovery / Body Diode | Fast recovery diode characteristic | Includes intrinsic body diode | Recovery behavior affects switching losses and EMI in inductive circuits; the roles differ between the two parts. |
| Typical Application | Rectification, freewheeling, snubber diodes | Switching in inverters, motor drives, PFC | Intended applications differ, so functional substitutability between these parts is generally not possible. |
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | APT30DQ120BG | APT30GP60LDLG |
|---|---|---|
| Supplier | - | Microchip Technology |
| Part Status | Active | Active |
| IGBT Type | - | PT |
| Voltage - Collector Emitter Breakdown(Max) | - | 600 V |
| Current - Collector(Ic)(Max) | - | 100 A |
| Current - Collector Pulsed(Icm) | - | 120 A |
| Vce(on)(Max) @ Vge Ic | - | 2.7V @ 15V, 30A |
| Power - Max | - | 463 W |
| Switching Energy | - | 260µJ (on), 250µJ (off) |
| Input Type | - | Standard |
| Gate Charge | - | 90 nC |
| Td(on / off) @ 25°C | - | 13ns/55ns |
| Test Condition | - | 400V, 30A, 5Ohm, 15V |
| Operating Temperature | - | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Diode Type | Standard | - |
| Voltage - DC Reverse (Vr) (Max) | 1200 V | - |
| Current - Average Rectified(Io) | 30A | - |
| Voltage - Forward (Vf) (Max) @ If | 3.3 V @ 30 A | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | - |
| Reverse Recovery Time (trr) | 320 ns | - |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V | - |
Frequently asked questions
What are the primary differences between the APT30DQ120BG and the APT30GP60LDLG?
The APT30DQ120BG is a 1200 V, 30 A ultrafast recovery diode in a TO-247 package, while the APT30GP60LDLG is a 600 V, 30 A NPT fast IGBT in a TO-264 package. They differ in device type, voltage class, package, and switching characteristics, so they are not interchangeable.
Can the APT30DQ120BG and APT30GP60LDLG be substituted for each other?
No. The APT30DQ120BG is a discrete diode and the APT30GP60LDLG is an IGBT; they perform different functions in a circuit. Substitution would require redesign of the circuit topology and validation against the manufacturer datasheets.
What are the voltage and current ratings of the APT30DQ120BG?
The APT30DQ120BG is rated for a repetitive peak reverse voltage of 1200 V and an average forward current of 30 A at the specified case temperature, per the Microchip (Microsemi) datasheet.
What are the voltage and current ratings of the APT30GP60LDLG?
The APT30GP60LDLG is a 600 V NPT IGBT rated for 30 A collector current at the specified case temperature, with a fast-switching characteristic intended for high-frequency applications, per the Microchip (Microsemi) datasheet.
How do the package types of these two devices compare?
The APT30DQ120BG is supplied in a TO-247 package, while the APT30GP60LDLG is supplied in a TO-264 package. The two packages have different footprints and lead arrangements, so PCB land patterns are not compatible.
Which device is better suited for high-voltage rectification?
The APT30DQ120BG, as a 1200 V ultrafast recovery diode, is intended for high-voltage rectification and freewheeling roles. The APT30GP60LDLG is a 600 V IGBT intended for switching applications, not for high-voltage rectification.
Which device is intended for switching applications such as inverters?
The APT30GP60LDLG, an NPT fast IGBT, is intended for switching applications including inverters and motor drives. The APT30DQ120BG is a diode and is used as a rectifier or freewheeling element rather than as the primary switch.
Are both devices from the same manufacturer?
Yes. Both the APT30DQ120BG and the APT30GP60LDLG are part of the Microchip Technology (formerly Microsemi) power product portfolio, and their parameters should be verified against the respective official datasheets.