Part A
IRF5305PBF
Công nghệ Infineon
- Lifecycle
- Active
- Stock
- 7745 PCS
- Package
- TO-220
- Series
- Transistors - FETs, MOSFETs - Single
Parts at a glance
Part B
IRF530NSTRLPBF
Công nghệ Infineon
- Lifecycle
- Active
- Stock
- 1441 PCS
- Package
- TO-263-3
- Series
- Transistors - FETs, MOSFETs - Single
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | IRF5305PBF | IRF530NSTRLPBF |
|---|---|---|
| Series | HEXFET® | HEXFET® |
| Part Status | Active | Active |
| FET Type | P-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 31A (Tc) | 17A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V | 10V |
| Rds On(Max) @ Id Vgs | 60mOhm @ 16A, 10V | 90mOhm @ 9A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 63 nC @ 10 V | 37 nC @ 10 V |
| Vgs(Max) | ±20V | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1200 pF @ 25 V | 920 pF @ 25 V |
| Power Dissipation (Max) | 110W (Tc) | 3.8W (Ta), 70W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Surface Mount |