Part A
IRFH7914TRPBF
Công nghệ Infineon
- Lifecycle
- Active
- Stock
- 1777 PCS
- Package
- PQFN-8
- Series
- Transistors - FETs, MOSFETs - Single
Parts at a glance
Part B
IRFH7911TR2PBF
Công nghệ Infineon
- Lifecycle
- Active
- Stock
- 5263 PCS
- Package
- VQFN-18
- Series
- Transistors - FETs, MOSFETs - Arrays
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | IRFH7914TRPBF | IRFH7911TR2PBF |
|---|---|---|
| Supplier | - | Infineon Technologies |
| Part Status | Active | Obsolete |
| FET Type | N-Channel | 2 N-Channel (Dual) |
| FET Feature | - | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30 V | 30V |
| Current - Continuous Drain(Id) @ 25°C | 15A (Ta), 35A (Tc) | 13A, 28A |
| Rds On(Max) @ Id Vgs | 8.7mOhm @ 14A, 10V | 8.6mOhm @ 12A, 10V |
| Vgs(th)(Max) @ Id | 2.35V @ 25µA | 2.35V @ 25µA |
| Gate Charge(Qg)(Max) @ Vgs | 12 nC @ 4.5 V | 12nC @ 4.5V |
| Input Capacitance(Ciss)(Max) @ Vds | 1160 pF @ 15 V | 1060pF @ 15V |
| Power - Max | - | 2.4W, 3.4W |
| Mounting Type | Surface Mount | Surface Mount |
| Series | HEXFET® | - |
| Technology | MOSFET (Metal Oxide) | - |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V | - |
| Vgs(Max) | ±20V | - |
| Power Dissipation (Max) | 3.1W (Ta) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | - |