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2N7001TDCKR
+BOMVOLTAGE TRANSLATOR
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Nhà sản xuấtTexas Dụng cụ
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Ông. Phần #2N7001TDCKR
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Bảng dữ liệu 2N7001TDCKR DataSheet
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Gói SC-70
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Có sẵn6084
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Translator Type | Voltage Level |
| Channel Type | Unidirectional |
| Number of Circuits | 1 |
| Channelsper Circuit | 1 |
| Voltage - VCCA | 1.65 V ~ 3.6 V |
| Voltage - VCCB | 1.65 V ~ 3.6 V |
| Input Signal | CMOS |
| Output Signal | CMOS |
| Output Type | Push-Pull |
| Data Rate | 100Mbps |
| Operating Temperature | -40°C ~ 125°C |
| Mounting Type | Surface Mount |
Tổng quan
Description
Key specifications of the 2N7001TDCKR include a drain-source voltage (V_DS) of 60V, a continuous drain current (I_D) of up to 115 mA, and a gate threshold voltage (V_GS(th)) typically around 2.1V. Its low gate charge and high-speed switching capabilities make it ideal for use in battery-operated devices and low-voltage applications. Additionally, the device features a low on-resistance (R_DS(on)), which ensures minimal power loss when the MOSFET is in the "on" state.
The 2N7001TDCKR is widely used in consumer electronics, signal switching, and other applications requiring efficient and reliable MOSFET performance.
Equivalent
1. 2N7000- A commonly used N-channel MOSFET with similar characteristics.
2. 2N7002 - Another variant often used as a substitute in similar applications.
3. BSS138- A small signal N-channel MOSFET with comparable specifications.
4. ZVN3306A - Used in similar low-power switching applications.
While these components generally share similar characteristics, always check the datasheets for compatibility with your specific requirements.
Features
1. Low On-Resistance: It offers a low R_DS(on), which minimizes power loss and enhances efficiency.
2. High-Speed Switching: This MOSFET supports fast switching times, which is ideal for high-frequency applications.
3. Low Gate Charge: The component requires a minimal gate charge, reducing the overall power consumption during switching.
4. Compact Package: It typically comes in a small surface-mount package (such as SOT-23), which is suitable for space-constrained designs.
5. Voltage Rating: It generally supports a drain-source voltage (V_DS) of about 60V, making it suitable for various applications.
6. Current Handling: Capable of managing moderate current levels, often up to a few hundred milliamps.
7. Wide Range of Applications: Used in digital circuits, load switching, level shifting, and more.
These features make the 2N7001TDCKR a versatile choice for efficient and compact electronic designs.
Pinout
The pins in a SOT-363 package for a dual MOSFET like 2N7001TDCKR are typically configured as follows:
1. Source 1
2. Gate 1
3. Drain 2
4. Source 2
5. Gate 2
6. Drain 1
Each MOSFET within the package has its own gate, source, and drain, allowing for two separate transistor functions. Always refer to the manufacturer's datasheet for the exact pin configuration and specifications, as they provide complete and authoritative details.