Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 260mA (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 2.5Ohm @ 240mA, 10V |
| Vgs(th)(Max)@Id | 2.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 0.81 nC @ 5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 26.7 pF @ 25 V |
| PowerDissipation(Max) | 300mW (Tj) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 (TO-236) |
Tổng quan
Description
The 2N7002ET1G is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits for switching and amplification purposes. It is designed for low power applications, making it suitable for use in portable devices and other low voltage systems.
Key specifications include a drain-source voltage (V_DS) of 60V, a continuous drain current (I_D) of up to 200 mA, and an on-resistance (R_DS(on)) of approximately 1.2 ohms at a gate-source voltage (V_GS) of 10V. The 2N7002ET1G is housed in a compact SOT-23 package, which is ideal for space-constrained applications.
Its low gate-source threshold voltage (V_GS(th)) allows it to be driven directly by microcontrollers or other logic-level devices, facilitating ease of integration into digital circuits. The MOSFET's fast switching speed and low power dissipation make it efficient for use in switching regulators, signal processing, and other applications where quick on/off transitions are required. Overall, the 2N7002ET1G is a versatile component used widely in both hobbyist and professional electronics.
Key specifications include a drain-source voltage (V_DS) of 60V, a continuous drain current (I_D) of up to 200 mA, and an on-resistance (R_DS(on)) of approximately 1.2 ohms at a gate-source voltage (V_GS) of 10V. The 2N7002ET1G is housed in a compact SOT-23 package, which is ideal for space-constrained applications.
Its low gate-source threshold voltage (V_GS(th)) allows it to be driven directly by microcontrollers or other logic-level devices, facilitating ease of integration into digital circuits. The MOSFET's fast switching speed and low power dissipation make it efficient for use in switching regulators, signal processing, and other applications where quick on/off transitions are required. Overall, the 2N7002ET1G is a versatile component used widely in both hobbyist and professional electronics.
Equivalent
The 2N7002ET1G chip is an N-channel MOSFET commonly used for switching and amplification. Equivalent products include:
1. 2N7002 by Fairchild/ON Semiconductor
2. BSS138by Vishay
3. IRLML2402 by Infineon
4. 2N7002K by Diodes Incorporated
5. BSS123by Infineon
These alternatives offer similar functionality and can be used in comparable applications. Always check the datasheets to ensure compatibility with your specific requirements.
1. 2N7002 by Fairchild/ON Semiconductor
2. BSS138by Vishay
3. IRLML2402 by Infineon
4. 2N7002K by Diodes Incorporated
5. BSS123by Infineon
These alternatives offer similar functionality and can be used in comparable applications. Always check the datasheets to ensure compatibility with your specific requirements.
Features
The 2N7002ET1G is a N-channel enhancement-mode MOSFET, often used in low-power switching applications. Key features include:
1. Voltage and Current Ratings: It typically operates at a maximum drain-source voltage (V_DS) of 60V and a maximum continuous drain current (I_D) of around 200mA.
2. R_DS(on): It has a low on-resistance, typically around 1.2Ω at V_GS = 10V, which ensures efficient performance with minimal power loss.
3. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically between 1V and 2.5V, making it suitable for interfacing with low-voltage systems.
4. Package: This MOSFET is commonly available in a compact SOT-23 package, ideal for space-constrained applications.
5. Switching Speed: The device offers fast switching capabilities, beneficial for high-frequency applications.
6. Thermal Performance: It provides good thermal performance with a maximum junction temperature (T_J) of 150°C.
These features make the 2N7002ET1G suitable for digital switching applications, load switching, and other general-purpose MOSFET uses.
1. Voltage and Current Ratings: It typically operates at a maximum drain-source voltage (V_DS) of 60V and a maximum continuous drain current (I_D) of around 200mA.
2. R_DS(on): It has a low on-resistance, typically around 1.2Ω at V_GS = 10V, which ensures efficient performance with minimal power loss.
3. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically between 1V and 2.5V, making it suitable for interfacing with low-voltage systems.
4. Package: This MOSFET is commonly available in a compact SOT-23 package, ideal for space-constrained applications.
5. Switching Speed: The device offers fast switching capabilities, beneficial for high-frequency applications.
6. Thermal Performance: It provides good thermal performance with a maximum junction temperature (T_J) of 150°C.
These features make the 2N7002ET1G suitable for digital switching applications, load switching, and other general-purpose MOSFET uses.
Pinout
The 2N7002ET1G is an N-channel MOSFET typically used for switching applications. It comes in a SOT-23 package and has three pins:
1. Gate (G): This pin controls the conductivity between the drain and source. Applying a voltage here allows current to flow between the drain and source.
2. Source (S): This is the terminal where the current enters the MOSFET. It's typically connected to the ground or negative supply voltage.
3. Drain (D): This is the terminal where the current exits the MOSFET. It is the primary output for the switched current.
The 2N7002ET1G is commonly used in low-voltage, low-power switching applications due to its small size and efficient operation.
1. Gate (G): This pin controls the conductivity between the drain and source. Applying a voltage here allows current to flow between the drain and source.
2. Source (S): This is the terminal where the current enters the MOSFET. It's typically connected to the ground or negative supply voltage.
3. Drain (D): This is the terminal where the current exits the MOSFET. It is the primary output for the switched current.
The 2N7002ET1G is commonly used in low-voltage, low-power switching applications due to its small size and efficient operation.
Manufacturer
The 2N7002ET1G is manufactured by ON Semiconductor. ON Semiconductor, now officially known as onsemi, is a multinational company specializing in semiconductor solutions. The company designs and manufactures a wide range of semiconductor components, including power and signal management, logic, discrete, and custom devices for various applications such as automotive, industrial, consumer electronics, and communications. Onsemi is known for its focus on energy-efficient innovations and delivering solutions that help reduce global energy use.
Application
The 2N7002ET1G is a small signal N-channel MOSFET commonly used in various applications due to its compact size and efficient performance. Key application areas include:
1. Switching Circuits: Utilized in low-power switching applications for controlling loads such as LEDs and relays.
2. Level Shifting: Employed in interfacing different logic levels, particularly in microcontroller circuits.
3. Load Drivers: Used for driving small loads in consumer electronics.
4. Signal Amplification: Suitable for amplification tasks in RF and analog applications.
5. Battery-Powered Devices: Helps in power management by minimizing power loss.
Its features make it ideal for portable and space-constrained applications.
1. Switching Circuits: Utilized in low-power switching applications for controlling loads such as LEDs and relays.
2. Level Shifting: Employed in interfacing different logic levels, particularly in microcontroller circuits.
3. Load Drivers: Used for driving small loads in consumer electronics.
4. Signal Amplification: Suitable for amplification tasks in RF and analog applications.
5. Battery-Powered Devices: Helps in power management by minimizing power loss.
Its features make it ideal for portable and space-constrained applications.
Package
The 2N7002ET1G is typically available in a SOT-23 package, which is a small, surface-mount package suitable for automated assembly processes. This package type is commonly used for small-signal MOSFETs like the 2N7002ET1G, offering compact size and efficient thermal performance.
