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2N7002P,215
+BOMMOSFET N-CH 60V 360MA TO236AB
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Nhà sản xuấtNexperia Hoa Kỳ Inc.
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Ông. Phần #2N7002P,215
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | Nexperia USA Inc. |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 360mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 1.6Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 2.4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 0.8 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 50 pF @ 10 V |
| Power Dissipation (Max) | 350mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-236AB |
Tổng quan
Description
Key points:
- Type: N-channel enhancement MOSFET
- VDS: typically up to about 60 V
- ID: up to a few hundred milliamps (vendor-dependent)
- RDS(on): a few ohms at VGS ≈ 4.5–5 V (higher at lower VGS)
- Gate threshold (VGS(th)): roughly 0.8–3 V, suitable for 3.3 V logic
- Drive: commonly driven directly by microcontroller GPIOs
- Package: surface-mount (e.g., SOT-23), with various manufacturer options
- Applications: switching, level shifting, buffering in low-voltage digital circuits
Note: exact numbers vary by manufacturer and part variant. For page-specific data (e.g., “215” in a particular datasheet), provide the vendor and I can pull the exact section.
Equivalent
Features
- N-channel enhancement-mode MOSFET for switching and amplification
- VDS: 60 V; ID: about 0.2 A (continuous)
- RDS(on): ≈3–5 Ω (typical ~3 Ω) at VGS = 10 V; higher at VGS = 4 V
- Logic-level gate: VGS(th) ~0.8–3.0 V
- Low gate charge; fast switching suitable for general-purpose switching
- Small-signal device in surface-mount package (SOT-23/3-pin); Pb-free / RoHS compliant
- Suitable for low-power, low-voltage switching, level shifting, and buffering applications
Note: exact figures can vary by lot and packaging variant; refer to the specific datasheet for the exact VGS, RDS(on) and package details.
Pinout
- Function: N-channel enhancement-mode MOSFET used as a small-signal switch; gate voltage controls conduction between drain and source (D–S) for switching applications.
Manufacturer
To confirm the exact manufacturer for the “,215” variant, check the part listing or datasheet on distributor sites (Digi‑Key, Mouser, Farnell) or the manufacturer’s website, or read the marking/packaging information on the component itself.
Application
- Low‑side switching of small loads (sensors, LEDs, relays via a driver) in 3.3–5 V MCU circuits
- Level shifting/voltage translation between logic domains (e.g., 3.3 V to 5 V)
- PWM switching for LED drivers or hobby motors in compact, battery‑powered gear
- Signal routing/buffering in space‑constrained designs (SOT‑23)
- I2C/SPI level‑shifter configurations with the gate tied to the reference rail
Note: 215 is likely a lot/date code, not an electrical spec.