Hình ảnh chỉ để tham khảo
2SA2071T100Q
+BOMTRANS PNP 60V 3A MPT3
-
Nhà sản xuấtBán dẫn Rohm
-
Ông. Phần #2SA2071T100Q
-
Bảng dữ liệu 2SA2071T100Q DataSheet
-
Có sẵn4427
365 Đảm bảo chất lượng ngày
7*24 giờ dịch vụ quarantee
90-Bảo hành sau bán hàng ngày
Bảo hành sản phẩm chính xác
Thông số kỹ thuật
| thuộc tính | Giá trị |
| Part Status | Not For New Designs |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (h FE) (Min) @ Ic, Vce | 120 @ 100mA, 2V |
| Power - Max | 2 W |
| Frequency - Transition | 180MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Supplier Device Package | MPT3 |
| Base Product Number | 2SA2071 |
Tổng quan
Description
Key specifications include a maximum collector current (Ic) of around 800 mA and a collector-emitter voltage (Vce) rating of 50V, making it suitable for medium power applications. The transistor also exhibits good thermal stability and robustness, which enhances its reliability in varied operating conditions.
In practical applications, the 2SA2071T100Q is often utilized in amplifier circuits, driver stages, and as a switch in power management systems. Due to its favorable electrical properties, it is widely used in consumer electronics, automotive systems, and industrial control applications. Always refer to the manufacturer's datasheet for detailed specifications and recommended operating conditions.
Equivalent
1. 2SA2070
2. 2SA2072
3. 2SA2073
Ensure to check the datasheets for specific parameters like voltage, current ratings, and package types to confirm compatibility for your application.
Features
1. Type: NPN Bipolar Junction Transistor (BJT).
2. Collector-Emitter Voltage (Vce): Up to 100V, suitable for high-voltage applications.
3. Collector Current (Ic): Rated at 1.5A, allowing for significant current handling.
4. DC Current Gain (hFE): Ranges from 100 to 320, providing good amplification capability.
5. Package Type: Typically available in TO-220 or similar packages, facilitating heat dissipation.
6. Operating Temperature: Can operate in a wide temperature range, typically from -55°C to +150°C.
7. Applications: Commonly used in audio amplifiers, power amplifiers, and as a switch in electronic circuits.
Overall, the 2SA2071T100Q is versatile and suitable for a variety of electronic applications requiring reliable performance at higher voltages and moderate currents.
Pinout
Pin Configuration:
1. Collector (C) - This is the terminal through which the current flows out of the transistor.
2. Base (B) - This terminal controls the transistor's operation. A small current flowing into the base allows a larger current to flow between the collector and emitter.
3. Emitter (E) - This terminal is where the current enters the transistor.
Function:
The primary function of the 2SA2071T100Q is to amplify electrical signals. It can handle a maximum collector current of up to 5 A and has a maximum collector-emitter voltage rating of 100 V, making it suitable for various electronic applications, including power amplifiers and switch mode power supplies.
Always refer to the manufacturer's datasheet for specific electrical characteristics and ratings.
Manufacturer
Toshiba is particularly well-regarded in the semiconductor industry, where it produces various components, such as transistors, integrated circuits, and memory devices. The 2SA2071T100Q is a type of NPN bipolar junction transistor (BJT), which is commonly used in amplification and switching applications.
The company's commitment to innovation and technology has positioned it as a leader in several sectors, including consumer electronics, energy systems, and digital solutions. Toshiba emphasizes sustainability and strives to contribute to environmental conservation through its product offerings and corporate social responsibility initiatives.