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2SK3566
+BOMMOSFETs N-Ch 900V 2.5A Rdson 6.4 Ohm
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Nhà sản xuấtToshiba
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Ông. Phần #2SK3566
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Bảng dữ liệu 2SK3566 DataSheet
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Có sẵn29141
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| thuộc tính | Giá trị |
| Standard Pack Qty | 50 |
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Description
Key specifications include a relatively high drain-source voltage (V_DS) and a continuous drain current (I_D), which enable it to manage substantial power loads. The device also features fast switching speeds, contributing to its effectiveness in high-frequency applications. Its construction allows for efficient thermal management, reducing the risk of overheating during operation.
Overall, the 2SK3566 is valued for its robust performance in demanding electronic environments, aiding in the efficient management and control of electrical power in both industrial and consumer electronic devices. When integrating this MOSFET into a circuit, appropriate considerations for gate-source voltage (V_GS) and adequate heat dissipation should be made to ensure optimal functionality and longevity.
Equivalent
Features
1. Voltage and Current Ratings: The device typically supports a high drain-source voltage and a significant continuous drain current, making it suitable for power applications.
2. Low On-Resistance: It offers low on-state resistance (RDS(on)), which minimizes power loss and enhances efficiency during operation.
3. Fast Switching Speed: The MOSFET is designed for fast switching times, which is beneficial for high-frequency applications.
4. Thermal Performance: It generally provides good thermal performance, which helps in efficient heat dissipation during operation, thus increasing the reliability and lifespan of the device.
5. Applications: Commonly used in power supply circuits, DC-DC converters, motor drivers, and other applications requiring efficient power management.
6. Package Types: Available in various package types to accommodate different mounting requirements and thermal performance needs.
These features make the 2SK3566 a versatile component for various electronic devices and systems requiring efficient power handling and management.
Pinout
1. Gate (G): Used to trigger the MOSFET by applying a voltage that controls the flow of current between the drain and source.
2. Drain (D): The terminal through which the main current flows from the drain to the source when the MOSFET is in the "on" state.
3. Source (S): The terminal through which the main current exits the MOSFET.
These pins are aligned in a linear fashion in the TO-3P package. The 2SK3566 is suitable for high-speed switching and power management applications due to its low on-resistance and high current handling capabilities.
Manufacturer
Application
1. Power Supplies: Used in switching power supplies due to its efficiency in handling high voltage and current.
2. Motor Drives: Effective in controlling motors in various industrial and consumer electronics applications.
3. DC-DC Converters: Utilized in voltage regulation and conversion circuits.
4. Inverters: Suitable for use in inverters, especially in renewable energy systems like solar inverters.
5. General Switching: Employed in any circuit requiring reliable high-speed switching.
Its characteristics make it favorable for high-frequency, high-efficiency power applications.