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AO4294
+BOMMOSFET N-CH 100V 11.5A 8SO
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Nhà sản xuấtCông ty bán dẫn Alpha & Omega
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Ông. Phần #AO4294
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | Alpha & Omega Semiconductor Inc. |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 11.5A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 12mOhm @ 11.5A, 10V |
| Vgs(th)(Max) @ Id | 2.4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 50 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 2420 pF @ 50 V |
| Power Dissipation (Max) | 3.1W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
Tổng quan
Description
To get an accurate introduction, you would need to reference the course syllabus or description from the institution offering the course. Typically, these documents outline the course objectives, key topics covered, prerequisites, lecture schedules, and assessment methods. If AO4294 is a specialized or advanced course, it might cover more complex or niche topics within a particular field of study. If you are interested in this course, consult the academic catalog or contact the department directly for detailed information.
Equivalent
Pinout
1. Source 1 (S1): Source terminal for the first N-channel MOSFET.
2. Gate 1 (G1): Gate terminal for the first N-channel MOSFET.
3. Drain 1 (D1): Drain terminal for the first N-channel MOSFET.
4. Drain 1 (D1): Another Drain terminal for the first N-channel MOSFET.
5. Drain 2 (D2): Drain terminal for the second N-channel MOSFET.
6. Drain 2 (D2): Another Drain terminal for the second N-channel MOSFET.
7. Gate 2 (G2): Gate terminal for the second N-channel MOSFET.
8. Source 2 (S2): Source terminal for the second N-channel MOSFET.
The AO4294 is used in applications requiring efficient switching, such as power management in electronic devices.