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APT30GP60BDQ1G
+BOMIGBT PT 600V 100A TO247
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Nhà sản xuấtCông nghệ Microchip
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Ông. Phần #APT30GP60BDQ1G
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Series | POWER MOS 7® |
| PartStatus | Active |
| IGBTType | PT |
| Voltage-CollectorEmitterBreakdown(Max) | 600 V |
| Current-Collector(Ic)(Max) | 100 A |
| Vce(on)(Max)@Vge,Ic | 2.7V @ 15V, 30A |
| Power-Max | 463 W |
| SwitchingEnergy | 260µJ (on), 250µJ (off) |
| InputType | Standard |
| GateCharge | 90 nC |
| Td(on/off)@25°C | 13ns/55ns |
| TestCondition | 400V, 30A, 5Ohm, 15V |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-247-3 |
| SupplierDevicePackage | TO-247 [B] |
| BaseProductNumber | APT30GP60 |
| Current-CollectorPulsed(Icm) | 120 A |
Tổng quan
Description
The APT30GP60BDQ1G offers fast switching times, which enhances overall efficiency in power conversion systems. It is housed in a durable package that facilitates thermal management, ensuring reliable operation under demanding conditions. The MOSFET's gate threshold voltage is optimized for compatibility with standard drive voltages, allowing for easy integration into existing circuit designs.
Overall, the APT30GP60BDQ1G stands out for its balance of performance, efficiency, and reliability, making it a popular choice among engineers in the field of power electronics.
Equivalent
Features
1. Voltage Rating: It typically supports a drain-source voltage (V_DS) of 60V, making it suitable for medium voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 30A, allowing for substantial load handling.
3. Low R_DS(on): It features a low on-resistance, enabling reduced conduction losses and improved thermal performance, which is crucial for efficiency.
4. Fast Switching Speed: The device is optimized for rapid switching, beneficial in high-frequency applications.
5. Thermal Performance: It comes in a TO-220 package, providing effective heat dissipation, which enhances reliability.
6. Gate Threshold Voltage: With a low gate threshold voltage, it ensures easier drive requirements for various control circuits.
These features make the APT30GP60BDQ1G suitable for applications in power supplies, motor drives, and other high-performance electronic systems.
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin turns the device on or off.
2. Drain (D): This is the output pin where current flows out of the MOSFET when it is on. It connects to the load in the circuit.
3. Source (S): This pin is connected to the ground or negative side of the power supply. Current enters the MOSFET through this pin.
The APT30GP60BDQ1G is capable of handling high voltage and current, making it suitable for various applications such as switching regulators and motor control.
Manufacturer
The APT30GP60BDQ1G itself is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is utilized in power conversion applications, showcasing ON Semiconductor's commitment to providing reliable and high-performance electronic components. The focus of the company is on innovation and sustainability, aiming to help customers achieve their design goals while minimizing energy consumption and environmental impact.
Application
1. Industrial Motor Drives: Used in variable frequency drives for efficient motor control.
2. Renewable Energy: Ideal for inverters in solar and wind energy systems.
3. Power Supplies: Utilized in switch-mode power supplies for efficient energy conversion.
4. Welding Equipment: Employed in arc welding power sources for precise control.
5. HVAC Systems: Applied in variable speed drives for heating, ventilation, and air conditioning systems.
Its robust performance and efficiency make it suitable for demanding applications in various sectors.