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BD135
+BOMTRANS NPN 45V 1.5A TO126
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Nhà sản xuấtonsemi
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Ông. Phần #BD135
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Bảng dữ liệu BD135 DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | onsemi,Rochester Electronics, LLC |
| Package / Case | Bulk,Bulk |
| Part Status | Obsolete |
| Transistor Type | NPN |
| Current - Collector(Ic)(Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown(Max) | 45 V |
| Vce Saturation(Max) @ Ib Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff(Max) | 100nA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 40 @ 150mA, 2V |
| Power - Max | 1.25 W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
Tổng quan
Description
Housed in a TO-126 package, the BD135 provides efficient thermal management, important for maintaining performance and longevity under load. It has a transition frequency of around 190 MHz, making it capable of handling relatively high-speed operations. Due to its robust design, it is a popular choice among hobbyists and professionals for use in DIY projects and commercial electronics alike. The BD135 can be paired with complementary transistors like the BD136 (PNP) for push-pull amplifier configurations, enhancing its versatility in circuit design.
Equivalent
Features
1. Polarity: NPN
2. Collector-Emitter Voltage (Vce): 45V
3. Collector-Base Voltage (Vcb): 45V
4. Emitter-Base Voltage (Veb): 5V
5. Collector Current (Ic): 1.5A
6. Power Dissipation (Ptot): 12.5W
7. DC Current Gain (hFE): 40 to 250
8. Package Type: TO-126
9. Transition Frequency (fT): Typically around 190 MHz
The BD135 transistor is suitable for use in audio amplifiers, signal amplifiers, and various switching applications due to its adequate current and voltage ratings. Its TO-126 package allows for efficient heat dissipation, making it suitable for moderate power applications. The transistor's gain and frequency response make it versatile for many electronic projects.
Pinout
1. Collector (C): This is the terminal where the majority of current enters the transistor. It is connected to the load in a circuit.
2. Base (B): This terminal controls the transistor's operation. A small current or voltage applied at the base can control a larger current flow between the collector and emitter.
3. Emitter (E): This terminal is where the current exits the transistor. In an NPN transistor like the BD135, the emitter is usually connected to the ground in a common-emitter configuration.
These pins allow the BD135 to function effectively in a variety of electronic circuits, handling a maximum collector current of 1.5A and a collector-emitter voltage of up to 45V. It is suitable for medium power applications.
Manufacturer
STMicroelectronics is a multinational corporation headquartered in Geneva, Switzerland. It is one of the largest semiconductor companies in the world and provides a wide range of electronic and semiconductor solutions, including transistors, microcontrollers, and sensors, catering to various sectors such as automotive, industrial, personal electronics, and more.
Nexperia, on the other hand, is a global semiconductor company headquartered in Nijmegen, Netherlands. It specializes in discrete, logic, and MOSFET devices, focusing on efficient power semiconductor technology. The company was formerly part of NXP Semiconductors and became an independent entity in 2017. Nexperia provides components designed to meet the demands of the automotive, consumer electronics, and computing markets, among others.
Both companies are integral parts of the global electronics supply chain, supplying essential components that power numerous electronic devices and systems worldwide.