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BF998R
+BOMRF MOSFET Transistors N-channel dual-gate MOSFET
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Nhà sản xuấtNXP bán dẫn
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Ông. Phần #BF998R
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Description
Key characteristics of the BF998R include its low noise performance, making it ideal for applications where signal integrity is crucial, and its ability to operate at high frequencies, often in the VHF and UHF range. It typically comes in a small SOT-143 package, which is beneficial for compact circuit designs. This component is favored in applications demanding precision and stability in signal processing, such as in communication devices and broadcasting equipment.
Equivalent
1. BF998 - Similar performance with different packaging.
2. BF998WR - A version with a wider range.
3. BF981 - Another dual-gate MOSFET with comparable characteristics.
These alternatives should be checked for specific parameter variances such as gain, noise figure, and frequency range to ensure they meet your application's requirements. Always refer to the manufacturer's datasheets for precise compatibility.
Features
1. Dual-Gate MOSFET Design: The dual-gate configuration allows for better control over gain and noise figure, making it ideal for RF amplification and mixers.
2. High Frequency Capability: It operates effectively at very high frequencies, suitable for applications in the VHF and UHF bands.
3. Low Noise Figure: The BF998R is designed to provide a low noise figure, which is critical for improving the sensitivity of RF receivers.
4. High Gain: It offers substantial gain, enhancing the signal strength in various applications.
5. Low Power Consumption: The BF998R is efficient in power usage, making it suitable for battery-operated devices.
6. Surface-Mount Package: Typically available in a small SOT-143 package, which supports compact circuit designs.
These features make the BF998R a versatile choice for designers working on RF amplifier and mixer circuits in telecommunications and broadcasting equipment.
Pinout
1. Pin 1 (S): Source
2. Pin 2 (G1): Gate 1 (Control Gate)
3. Pin 3 (G2): Gate 2 (Gain Adjustment Gate)
4. Pin 4 (D): Drain
The dual-gate configuration allows for better control over the gain and improved signal handling capabilities, making it suitable for RF front-end applications.