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BFP420H6327
+BOM-
Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #BFP420H6327
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Có sẵn5878
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Manufacturer | Infineon Technologies |
| Package / Case | SOT-343 |
| Pd - Power Dissipation | 210mW |
| type | NPN |
| Current - Collector(Ic) | 60mA |
| Collector - Emitter Voltage VCEO | 4.5V |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector Cutoff | 100nA |
| Transition frequency(f T) | 25GHz |
| DC Current Gain | 60@20mA,4V |
Tổng quan
Description
The transistor is available in a compact SOT-23 package, facilitating easy integration into printed circuit boards. Its maximum collector current rating typically supports moderate power applications, while the operating temperature range ensures reliable performance in various environmental conditions.
Applications include low-noise amplifiers, RF front-end modules, and signal processing circuits in consumer electronics. The BFP420H6327 is appreciated for its robustness and efficiency, making it a popular choice among engineers and designers in the electronics industry.
Equivalent
Features
1. High Gain: Offers a high current gain, making it suitable for amplification tasks.
2. Low Noise: Designed to provide low noise performance, ideal for sensitive RF circuits.
3. Wide Frequency Range: Operates effectively in a broad frequency range, enhancing versatility in applications.
4. Compact Package: Housed in a small SOT-23 package, allowing for space-saving designs in electronic devices.
5. High Cut-off Frequency: High fT (transition frequency) enables efficient operation in high-speed applications.
6. Low Collector-Emitter Saturation Voltage: Enhances efficiency in switching applications.
7. Temperature Stability: Designed to perform reliably across a range of operating temperatures.
These features make the BFP420H6327 suitable for use in RF amplifiers, oscillators, and other communication applications.
Pinout
### Pin Functions:
1. Base (B): Controls the transistor's operation, allowing the input signal to modulate the output.
2. Collector (C): Connects to the supply voltage; it's where the output signal is taken from.
3. Emitter (E): Grounds the transistor and is the terminal through which the output current flows.
This transistor is optimized for low noise and high linearity, making it suitable for amplifying RF signals in various communication systems.