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BSH111BKR
+BOMMOSFET N-CH 55V 210MA TO236AB
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Nhà sản xuấtNexperia Hoa Kỳ Inc.
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Ông. Phần #BSH111BKR
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Có sẵn5005
365 Đảm bảo chất lượng ngày
7*24 giờ dịch vụ quarantee
90-Bảo hành sau bán hàng ngày
Bảo hành sản phẩm chính xác
Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | Nexperia USA Inc. |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain(Id) @ 25°C | 210mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V |
| Rds On(Max) @ Id Vgs | 4Ohm @ 200mA, 4.5V |
| Vgs(th)(Max) @ Id | 1.3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 0.5 nC @ 4.5 V |
| Vgs(Max) | ±10V |
| Input Capacitance(Ciss)(Max) @ Vds | 30 pF @ 30 V |
| Power Dissipation (Max) | 302mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-236AB |
Tổng quan
Description
BSH111BKR is an entry-level course in [subject area] designed to build foundational knowledge and skills for beginners. Through a mix of lectures, discussions, and practical exercises, students explore core concepts, develop critical thinking, and learn to apply basic methods to simple problems. Prerequisites are minimal or none. Assessments typically include short quizzes, written assignments, and a small project. By the end of the course, students should be able to explain key concepts, demonstrate basic techniques, and communicate results clearly, preparing them for more advanced topics in the BSH sequence.