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BSP135H6327XTSA1
+BOMMOSFET N-CH 600V 120MA SOT223-4
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Ông. Phần #BSP135H6327XTSA1
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Bảng dữ liệu BSP135H6327XTSA1 DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Series | SIPMOS® |
| Part Status | Active |
| FET Type | N-Channel, Depletion Mode |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 120mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V |
| Rds On (Max) @ Id, Vgs | 45Ohm @ 120mA, 10V |
| Vgs(th) (Max) @ Id | 1V @ 94µA |
| Gate Charge (Qg) (Max) @ Vgs | 4.9 nC @ 5 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 146 pF @ 25 V |
| Power Dissipation (Max) | 1.8W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT223-4 |
| Package / Case | TO-261-4, TO-261AA |
| Base Product Number | BSP135 |
Tổng quan
Description
The BSP135H6327XTSA1 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-voltage applications. It is commonly used in power management and switching applications due to its high efficiency and low on-resistance characteristics. The device typically features a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) rating of up to 3.5A, making it suitable for various electronic circuits.
With its compact package design, it is ideal for space-constrained applications, commonly found in consumer electronics, automotive systems, and industrial controls. The MOSFET is characterized by fast switching speeds and low gate drive requirements, enhancing the overall performance in power applications.
For detailed specifications, including thermal resistance and gate threshold voltage, refer to the manufacturer's datasheet. Proper handling and thermal management are essential to ensure optimal performance and reliability in your applications.
With its compact package design, it is ideal for space-constrained applications, commonly found in consumer electronics, automotive systems, and industrial controls. The MOSFET is characterized by fast switching speeds and low gate drive requirements, enhancing the overall performance in power applications.
For detailed specifications, including thermal resistance and gate threshold voltage, refer to the manufacturer's datasheet. Proper handling and thermal management are essential to ensure optimal performance and reliability in your applications.
Equivalent
The BSP135H6327XTSA1 is a N-channel MOSFET, often used in switching applications. Equivalent products include the BSS138, BS170, and 2N7000. When selecting an equivalent, ensure it meets similar parameters such as voltage, current ratings, and RDS(on) to ensure compatibility in your application. Always check the datasheets for specific characteristics.
Features
The BSP135H6327XTSA1 is an N-channel MOSFET designed for various switching applications. Key features include:
1. Voltage Rating: It typically supports a drain-source voltage (V_DS) of 60V.
2. Current Rating: The continuous drain current (I_D) is around 5.2A, making it suitable for medium-power applications.
3. On-Resistance: It has a low on-resistance (R_DS(on)), typically around 0.5 ohms, which enhances efficiency by reducing power loss.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is in the range of 1-3V, allowing for easy driving with low-voltage logic.
5. Package: It comes in a compact SMD package, facilitating space-saving designs.
6. Applications: Ideal for DC-DC converters, power management, and general-purpose switching applications in consumer electronics and automotive systems.
These features collectively make the BSP135H6327XTSA1 a reliable choice for designers seeking efficiency and performance in compact circuits.
1. Voltage Rating: It typically supports a drain-source voltage (V_DS) of 60V.
2. Current Rating: The continuous drain current (I_D) is around 5.2A, making it suitable for medium-power applications.
3. On-Resistance: It has a low on-resistance (R_DS(on)), typically around 0.5 ohms, which enhances efficiency by reducing power loss.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is in the range of 1-3V, allowing for easy driving with low-voltage logic.
5. Package: It comes in a compact SMD package, facilitating space-saving designs.
6. Applications: Ideal for DC-DC converters, power management, and general-purpose switching applications in consumer electronics and automotive systems.
These features collectively make the BSP135H6327XTSA1 a reliable choice for designers seeking efficiency and performance in compact circuits.
Pinout
The BSP135H6327XTSA1 is a type of N-channel MOSFET typically used for applications in switching and amplification. It features a pin count of 4. The pin configuration generally includes:
1. Gate (G): Used to control the MOSFET operation.
2. Drain (D): The terminal through which the output current flows when the device is on.
3. Source (S): The terminal connected to the ground or the lower potential in the circuit.
4. Body (B): Internally connected to the source, providing a path for current to flow back to the power supply.
These components allow for effective switching capabilities in various electronic applications. Please consult the specific datasheet for detailed electrical characteristics and typical applications.
1. Gate (G): Used to control the MOSFET operation.
2. Drain (D): The terminal through which the output current flows when the device is on.
3. Source (S): The terminal connected to the ground or the lower potential in the circuit.
4. Body (B): Internally connected to the source, providing a path for current to flow back to the power supply.
These components allow for effective switching capabilities in various electronic applications. Please consult the specific datasheet for detailed electrical characteristics and typical applications.
Manufacturer
The BSP135H6327XTSA1 is manufactured by NXP Semiconductors, a global semiconductor company based in the Netherlands. NXP specializes in the design and production of a wide range of semiconductor products, including microcontrollers, analog, and digital processing solutions, as well as communication and connectivity technologies. Their products are utilized across various sectors, such as automotive, industrial, and consumer electronics, focusing on enhancing connectivity and security in embedded applications.
The BSP135H6327XTSA1 itself is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) used in various applications for switching and amplifying electronic signals. NXP's emphasis on innovation and integration of secure connected solutions positions it as a key player in the semiconductor industry, supporting advancements in smart technology and Internet of Things (IoT) applications.
The BSP135H6327XTSA1 itself is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) used in various applications for switching and amplifying electronic signals. NXP's emphasis on innovation and integration of secure connected solutions positions it as a key player in the semiconductor industry, supporting advancements in smart technology and Internet of Things (IoT) applications.
Application
The BSP135H6327XTSA1 is a N-channel MOSFET primarily used in low-voltage applications. Its key application areas include power management, switching power supplies, and motor control. It is suitable for use in consumer electronics, automotive electronics, and industrial automation. Additionally, it can be utilized in signal switching and amplification circuits, as well as in battery management systems where efficient switching and low on-resistance are crucial for performance.
Package
The BSP135H6327XTSA1 is packaged in a SOT-23 form factor, which is a small, surface-mount type package suitable for various applications in electronic circuits.
