BSS139H6327

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BSS139H6327

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  • Nhà sản xuấtCông nghệ Infineon

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thuộc tính Giá trị
Manufacturer Infineon Technologies
Package / Case SOT-23
Operating Temperature -55℃~+150℃
Rds(on) 30Ω@0V,15mA
Drain to Source Voltage (Vdss) 250V
Pd - Power Dissipation 360mW
Current - Continuous Drain(Id) 100mA
Reverse Transfer Capacitance (Crss @ Vds) 3.3pF
Input Capacitance(Ciss @ Vds) 76pF
Gate Charge(Qg) 3.5nC@5V
Number 1 N-channel

Tổng quan

Description

BSS139H6327 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used primarily for switching and amplification in electronic circuits. It has a low on-resistance, allowing it to efficiently conduct current with minimal energy loss. The device is characterized by its ability to handle moderate voltage and current levels, making it suitable for various applications, including power management, signal switching, and as a relay replacement in low-voltage circuits.
Typically, it features a maximum drain-source voltage (Vds) around 60V and a continuous drain current (Id) rating of several amps, depending on the thermal management and conditions of use. Its small package size allows for high-density circuit designs, making it popular in consumer electronics, automotive applications, and industrial control systems. The BSS139H6327 is also favored for its fast switching capabilities, contributing to efficient circuit operation in modern electronic devices.

Equivalent

The BSS139H6327 is an N-channel MOSFET. Equivalent products include the 2N7000, BS170, and BSS84 (for complementary applications). Other suitable substitutes may include the BSS138 and 2N7002, depending on the specific voltage and current requirements. Always consult datasheets for exact specifications and suitability in specific circuits.

Features

The BSS139H6327 is an N-channel MOSFET designed for various switching and amplification applications. Key features include:
1. Voltage Rating: It typically supports a drain-source voltage (V_DS) of up to 60V, making it suitable for medium-voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 3.3A, allowing it to manage significant loads.
3. Low On-Resistance: The R_DS(on) is low, typically around 0.8 ohms at V_GS of 10V, which minimizes power loss during operation.
4. Fast Switching Speed: It provides quick switching capabilities, making it ideal for high-frequency applications.
5. Package: It is usually available in a TO-220 or SMD package, facilitating integration into various designs.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically in the range of 1V to 3V, enabling it to activate with low gate drive voltage.
These features make the BSS139H6327 a popular choice for applications like motor drivers, power management, and LED drivers.

Pinout

The BSS139H6327 is an N-channel MOSFET with a pin count of 3. The typical pin configuration is as follows:
1. Gate (G) - This pin is used to control the MOSFET. Applying a voltage here allows the device to turn on and conduct current.
2. Drain (D) - This pin is the output where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S) - This pin is connected to ground or a lower potential in the circuit, allowing the current to flow from drain to source when activated.
The BSS139 is primarily used in switching applications, signal amplification, and as a level shifter in low-power applications. Its compact design and efficiency make it suitable for various electronic circuits.

Manufacturer

The manufacturer of the BSS139H6327 is NXP Semiconductors. NXP Semiconductors is a global semiconductor company that specializes in various electronic components, including microcontrollers, sensors, and semiconductor solutions for automotive, industrial, IoT, and communication applications. The company emerged from a spin-off of Philips' semiconductor division in 2006 and has since established itself as a leader in embedded applications and connectivity solutions. NXP is known for its innovation in areas such as secure connectivity and automotive electronics, focusing on providing high-performance, energy-efficient products that support the growing demand for smart technology.

Application

The BSS139H6327 is a N-channel MOSFET primarily used in applications such as low-side switching, signal amplification, and power management in electronic circuits. Its characteristics make it suitable for use in battery management systems, DC-DC converters, and motor control. Additionally, it is commonly employed in consumer electronics, automotive applications, and LED drivers due to its efficient performance and low on-resistance. Its compact package allows for space-saving designs in printed circuit boards (PCBs).

Package

The BSS139H6327 is typically packaged in a SOT-23 format. This surface-mount package is commonly used for MOSFETs and provides a compact solution for various electronic applications.

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