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BSZ019N03LS
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Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #BSZ019N03LS
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Bảng dữ liệu BSZ019N03LS DataSheet
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Gói TSDSON-8
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Có sẵn3370
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Factory Pack Quantity:Factory Pack Quantity | 5000 |
| Technology | Si |
| REACH - SVHC | Details |
| Mounting Style | SMD/SMT |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - Continuous Drain Current | 149 A |
| Rds On - Drain-Source Resistance | 2 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 44 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 69 W |
| Channel Mode | Enhancement |
| Tradename | OptiMOS |
| Configuration | Single |
| Fall Time | 4.6 ns |
| Height | 1.1 mm |
| Length | 3.3 mm |
| Rise Time | 6.8 ns |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 28 ns |
| Typical Turn-On Delay Time | 5.4 ns |
| Width | 3.3 mm |
| Part # Aliases | SP000792362 BSZ19N3LSXT BSZ019N03LSATMA1 |
| Unit Weight | 112,430 mg |
| Package/Case | TSDSON-8 |
| Forward Transconductance - Min | 70 S |
Tổng quan
Description
While specific details about the content and objectives of BSZ019N03LS are not provided, courses with similar codes typically cover foundational concepts, theories, and practical applications relevant to the field. They often aim to equip students with essential skills and knowledge for further study or professional development. For exact information about the course structure, prerequisites, and outcomes, it's best to consult the relevant academic institution or program guidelines.
Equivalent
Features
1. Voltage Rating: It typically has a drain-source voltage (VDS) rating of 30V, suitable for various low-voltage applications.
2. Current Rating: The device can handle a continuous drain current (ID) of 19A, making it ideal for power management tasks.
3. Low RDS(on): It boasts a low on-resistance (RDS(on)), usually around 3.2 mΩ, which minimizes power losses and improves thermal performance.
4. Fast Switching: The MOSFET enables rapid switching capabilities, enhancing efficiency in high-frequency applications.
5. Package Type: Usually comes in a DPAK or similar package, ensuring ease of integration into circuits.
6. Thermal Performance: It offers good thermal characteristics, allowing for reliable operation in demanding environments.
These features make the BSZ019N03LS suitable for applications such as DC-DC converters, motor drives, and power management systems.
Pinout
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate allows the device to turn on or off.
2. Drain (D) - The drain pin is where the current flows out of the device when it is in the on-state.
3. Source (S) - The source pin is where the current enters the device.
This MOSFET is designed for applications such as power management and switching, with low on-resistance and fast switching capabilities.
Manufacturer
Application
1. DC-DC Converters: For efficient voltage regulation in power supplies.
2. Switching Power Supplies: To enhance efficiency in AC-DC conversion.
3. Motor Drives: For controlling and driving electric motors in industrial and automotive applications.
4. Load Switching: In various electronic devices for controlling power delivery.
5. LED Drivers: For efficient lighting applications.
Its low on-resistance and high-speed switching capabilities make it suitable for these applications.