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BUK7Y6R0-60EX
+BOMTRANSISTOR >30MHZ
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Nhà sản xuấtNXP Hoa Kỳ Inc.
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Ông. Phần #BUK7Y6R0-60EX
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Có sẵn3262
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | Rochester Electronics, LLC |
| Package / Case | Bulk |
| Series | TrenchMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 100A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 6mOhm @ 25A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 1mA |
| Gate Charge(Qg)(Max) @ Vgs | 45.4 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 4021 pF @ 25 V |
| Power Dissipation (Max) | 195W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | LFPAK56, Power-SO8 |
Tổng quan
Description
BUK7Y6R0-60EX appears to be a power semiconductor part number (likely a MOSFET or IGBT) used in switching power electronics. It is not a widely standardized part name, so exact specs depend on the manufacturer.
Common characteristic expectations (typical for such parts):
- High voltage and current rating for switching power supplies, motor drives, inverters.
- Low on-state resistance (MOSFET) or high blocking voltage with fast switching (IGBT).
- Packages suitable for heatsinking (e.g., D²PAK, TO-220, etc.) and gate-drive compatibility.
What you should do to get a solid introduction:
- Locate the datasheet from the exact manufacturer or distributor (DigiKey/Mouser, etc.).
- Confirm device type (MOSFET vs IGBT), Vds, Id, Rds(on) or Vce(sat), gate drive requirements, switching speeds, thermal resistance, and packaging.
- Check application notes for typical circuits and recommended gate drive.
If you can provide the manufacturer or a link, I can give a precise, concise summary of its datasheet.
Common characteristic expectations (typical for such parts):
- High voltage and current rating for switching power supplies, motor drives, inverters.
- Low on-state resistance (MOSFET) or high blocking voltage with fast switching (IGBT).
- Packages suitable for heatsinking (e.g., D²PAK, TO-220, etc.) and gate-drive compatibility.
What you should do to get a solid introduction:
- Locate the datasheet from the exact manufacturer or distributor (DigiKey/Mouser, etc.).
- Confirm device type (MOSFET vs IGBT), Vds, Id, Rds(on) or Vce(sat), gate drive requirements, switching speeds, thermal resistance, and packaging.
- Check application notes for typical circuits and recommended gate drive.
If you can provide the manufacturer or a link, I can give a precise, concise summary of its datasheet.
Pinout
Pin count: 3 pins (Gate, Drain, Source) with the Drain tied to the exposed tab (4 electrical connections total in the package).
Function: N-channel enhancement-mode power MOSFET used as a high-current switching device in power electronics (DC-DC converters, motor drives, etc.).
Function: N-channel enhancement-mode power MOSFET used as a high-current switching device in power electronics (DC-DC converters, motor drives, etc.).
Application
BUK7Y6R0-60EX is a 60V N-channel power MOSFET with low on-resistance. Common application areas:
- DC-DC converters and switching regulators (buck/boost)
- Motor control and motor-driver circuits (DC motors, stepper)
- Automotive power electronics (DC-DC, load switches, power stages)
- Solar/battery management and inverters
- General high-speed switching and power-management circuits in consumer, telecom, and industrial equipment
- DC-DC converters and switching regulators (buck/boost)
- Motor control and motor-driver circuits (DC motors, stepper)
- Automotive power electronics (DC-DC, load switches, power stages)
- Solar/battery management and inverters
- General high-speed switching and power-management circuits in consumer, telecom, and industrial equipment
Package
D2PAK (TO-263) surface-mount package with an exposed drain pad (EP).
