BYV26E-TAP

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BYV26E-TAP

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DIODE AVALANCHE 1KV 1A SOD 57

  • Nhà sản xuấtVishay General Semiconductor - Bộ phận Diode

  • Ông. Phần #BYV26E-TAP

  • Bảng dữ liệu BYV26E-TAP DataSheet

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Thông số kỹ thuật

thuộc tính Giá trị
Part Status Active
Base Product Number BYV26
Voltage - DC Reverse (Vr) (Max) 1000 V
Current - Average Rectified (Io) 1A
Voltage - Forward (Vf) (Max) @ If 2.5 V @ 1 A
Current - Reverse Leakage @ Vr 5 µA @ 1000 V
Mounting Type Through Hole
Package SOD-57, Axial
Supplier Device Package SOD-57
Operating Temperature - Junction -55°C ~ 175°C
Packaging Cut Tape (CT), Tape & Box (TB)
Technology Avalanche
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns

Tổng quan

Description

The BYV26E-TAP is a high-efficiency, ultrafast rectifier diode designed for switching power supplies, freewheeling, and reverse battery protection. Key features include:
- Ultrafast Recovery: Low reverse recovery time (≤35 ns), reducing switching losses.
- High Current Capability: Up to 2 A average forward current (IF(AV)).
- Low Forward Voltage: ~0.72 V (at 1 A), enhancing efficiency.
- High Surge Current: Withstands up to 50 A (non-repetitive).
- SMD Package: SOD-123FL for compact PCB designs.
Ideal for DC-DC converters, SMPS, and automotive applications, the BYV26E-TAP offers reliable performance in high-frequency circuits. Its AEC-Q101 qualification ensures robustness for automotive use.
For detailed specs, refer to the datasheet.

Features

The BYV26E-TAP is a high-efficiency rectifier diode with the following key features:
- Ultrafast Recovery: Low reverse recovery time (≤35 ns), ideal for high-frequency applications.
- High Current Capability: Forward current (IF) up to 2 A.
- Low Forward Voltage Drop (VF): Typically 0.95 V at 2 A, reducing power losses.
- High Surge Current (IFSM): Withstands up to 50 A (non-repetitive).
- High Reverse Voltage (VR): 600 V, suitable for medium-voltage circuits.
- SMD Package (DO-214AC/SMA): Compact and surface-mountable.
- Low Leakage Current (IR): Ensures efficiency in blocking mode.
Commonly used in SMPS, freewheeling diodes, and high-frequency rectification.

Pinout

The BYV26E-TAP is a fast recovery diode with 2 pins (anode and cathode).
Key Functions:
- High-speed switching (ultra-fast recovery time, typically 30 ns).
- Low forward voltage drop (efficient for power applications).
- High surge current capability.
- Reverse voltage rating: 200V.
Typical Applications:
- Power supplies (SMPS, flyback converters).
- Freewheeling/clamping diodes.
- High-frequency rectification.
Packaged in DO-41 (axial leaded).

Manufacturer

The BYV26E-TAP is manufactured by Nexperia, a leading semiconductor company specializing in high-performance discrete components, logic, and MOSFET devices. Nexperia was originally a division of NXP Semiconductors before becoming an independent company in 2017. It is known for its efficient, reliable, and high-volume production of diodes, transistors, and ESD protection devices.
Nexperia operates globally, with headquarters in Nijmegen, Netherlands, and manufacturing facilities in Europe and Asia. The company focuses on automotive, industrial, and consumer electronics markets, emphasizing quality and innovation.
The BYV26E-TAP is a fast-switching diode designed for high-efficiency applications like power supplies and rectification.

Application

The BYV26E-TAP is a fast-switching diode primarily used in:
1. Power Supplies – Rectification in switch-mode power supplies (SMPS) and DC-DC converters.
2. Freewheeling Diodes – Protecting circuits from voltage spikes in inductive loads (e.g., relays, motors).
3. Reverse Polarity Protection – Safeguarding circuits from incorrect power connections.
4. High-Frequency Circuits – Used in RF and fast-switching applications due to its low recovery time.
5. Automotive Electronics – Employed in alternators, ignition systems, and other high-efficiency rectification tasks.
Its fast recovery, low forward voltage, and high surge current capability make it suitable for high-efficiency applications.

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