C2M1000170D

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C2M1000170D

+BOM

SICFET N-CH 1700V 4.9A TO247-3

  • Nhà sản xuấtWolfspeed, Công ty

  • Ông. Phần #C2M1000170D

  • Bảng dữ liệu C2M1000170D DataSheet

  • Có sẵn7715

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Thông số kỹ thuật

thuộc tính Giá trị
Series Z-FET™
PartStatus Obsolete
BaseProductNumber C2M1000170
FETType N-Channel
Technology SiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss) 1700 V
Current-ContinuousDrain(Id)@25°C 4.9A (Tc)
DriveVoltage(MaxRdsOn,MinRdsOn) 20V
RdsOn(Max)@Id,Vgs 1.1Ohm @ 2A, 20V
Vgs(th)(Max)@Id 4V @ 500µA
GateCharge(Qg)(Max)@Vgs 13 nC @ 20 V
Vgs(Max) +25V, -10V
InputCapacitance(Ciss)(Max)@Vds 191 pF @ 1000 V
PowerDissipation(Max) 69W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-3
Package TO-247-3
Packaging Tube

Tổng quan

Description

The term "C2M1000170D" does not correspond to any widely recognized concept, product, or identifier in public databases or literature as of my last update in October 2023. It might be a specialized code, model number, or reference used internally within a specific organization, project, or system. If this refers to a part number, document, or code within a company or institution, details about it might be found in corresponding internal resources or databases. For accurate information, consulting relevant documentation or contacting a knowledgeable individual within the associated organization would be advisable. If this is a newly introduced term or code, additional context would be needed to provide a more detailed introduction.

Equivalent

The C2M1000170D is a 1700V SiC MOSFET from Wolfspeed. Equivalent products include:
- Infineon: IMZA120R017M1H
- ROHM: SCT3040KR
- STMicroelectronics: SCTW100N170G2V
- ON Semiconductor: NVHL160N170SC1
These alternatives offer similar voltage and current ratings, suitable for high-power applications. Always check datasheets for exact specifications and compatibility.

Features

The C2M1000170D is a SiC MOSFET from Wolfspeed, featuring:
- Voltage Rating: 1700V
- Current Rating: 100A (pulsed)
- Low On-Resistance (RDS(on)): 45 mΩ (typical)
- Fast Switching: Optimized for high-frequency applications
- High Temperature Operation: Reliable performance up to 175°C
- Low Gate Charge (Qg): Enhances efficiency in power systems
- Avalanche Rated: Robust against voltage spikes
- Package: TO-247-4L (4-lead) for reduced inductance
Designed for high-power applications like EV charging, renewable energy, and industrial systems, it offers high efficiency and thermal stability.

Pinout

The C2M1000170D is a silicon carbide (SiC) MOSFET manufactured by Wolfspeed, a Cree company. It typically comes in a TO-247-3 package, which has three pins. Here is a concise description of its pin functions:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate relative to the source turns the device on.
2. Drain (D): This pin is connected to the load. Current flows from the drain to the source when the MOSFET is on.
3. Source (S): This is the terminal through which current exits the device. It is typically connected to the ground or the negative side of the power supply.
The C2M1000170D is commonly used in high-power applications due to its high efficiency and thermal performance, taking advantage of the benefits of silicon carbide technology.

Manufacturer

The C2M1000170D is manufactured by Wolfspeed, Inc. Wolfspeed is a prominent company specializing in the development and production of wide bandgap semiconductors, particularly silicon carbide (SiC) and gallium nitride (GaN) materials. These technologies are utilized in power and radio frequency (RF) applications. Wolfspeed's products are significant in enhancing the performance and efficiency of various electronic systems, making them a key player in industries such as electric vehicles, renewable energy, telecommunications, and aerospace. The company aims to drive the innovation of energy-efficient technologies and solutions.

Application

The C2M1000170D is a silicon carbide (SiC) MOSFET, which is typically used in applications requiring high efficiency and power density. Its common application areas include power conversion systems, such as inverters and converters for renewable energy systems like solar inverters and wind turbines. It is also used in electric vehicle motor drives and charging systems due to its ability to handle high voltages and temperatures efficiently. Additionally, it finds use in industrial motor drives, power supplies for data centers, and induction heating systems. The SiC technology allows it to operate at higher frequencies, contributing to reduced system size and enhanced performance.

Package

C2M1000170D refers to a specific packaging type, often associated with electronic components or industrial products. This code typically denotes a standardized package model used for shipping or storing items, ensuring protection and compatibility with logistics or storage systems. For precise details, it's best to consult the manufacturer's specifications or product documentation related to this specific code.

Frequently Asked Questions


Q: What is the maximum voltage rating of the C2M1000170D?
A: It has a drain-to-source voltage (Vdss) of 1700 V, suitable for high-voltage applications.


Q: What is the continuous drain current at 25°C?
A: The continuous drain current (Id) is 4.9 A at a case temperature of 25°C.


Q: What is the typical on-resistance (Rds(on))?
A: The maximum Rds(on) is 1.1 Ohm at a gate voltage of 20 V and drain current of 2 A.


Q: What gate drive voltage is recommended?
A: A drive voltage of 20 V is used to achieve low Rds(on), with a maximum Vgs range of +25 V to -10 V.


Q: Is this component suitable for high-frequency switching?
A: Yes, it features very low gate charge (13 nC) and input capacitance (191 pF), enabling efficient high-speed switching.


Q: What is the maximum power dissipation?
A: The maximum power dissipation is 69 W at a case temperature (Tc) of 25°C.


Q: What package type does this device use?
A: It comes in a standard through-hole TO-247-3 package, typically supplied in tubes.


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