C3M0016120K

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C3M0016120K

+BOM

SICFET N-CH 1.2KV 115A TO247-4

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Thông số kỹ thuật

thuộc tính Giá trị
Package Tube
Series C3M™
ProductStatus Active
FETType N-Channel
Technology SiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss) 1200 V
Current-ContinuousDrain(Id)@25°C 115A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 15V
RdsOn(Max)@IdVgs 22.3mOhm @ 75A, 15V
Vgs(th)(Max)@Id 3.6V @ 23mA
GateCharge(Qg)(Max)@Vgs 211 nC @ 15 V
Vgs(Max) +15V, -4V
InputCapacitance(Ciss)(Max)@Vds 6085 pF @ 1000 V
PowerDissipation(Max) 556W (Tc)
OperatingTemperature -40°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-4L

Tổng quan

Description

The C3M0016120K is a silicon carbide (SiC) power MOSFET from Wolfspeed, designed for high-efficiency, high-frequency applications. Key features include:
- 1200V voltage rating and 16A continuous current capability.
- Low on-resistance (RDS(on)) for reduced conduction losses.
- Fast switching performance, ideal for power converters, EV charging, and renewable energy systems.
- High thermal conductivity due to SiC technology, enabling better heat dissipation.
This MOSFET is commonly used in industrial, automotive, and energy applications where efficiency and reliability are critical. Its robust design supports harsh environments while minimizing energy losses.
For detailed specifications, refer to the official Wolfspeed datasheet.

Equivalent

The C3M0016120K is a 1200V SiC MOSFET from Wolfspeed. Equivalent alternatives include:
- ROHM SCT3040KR (1200V, 40mΩ)
- Infineon IMZ120R045M1 (1200V, 45mΩ)
- STMicroelectronics SCTW35N120G2V (1200V, 35mΩ)
- ON Semiconductor NTH4L020N120SC1 (1200V, 20mΩ)
Check datasheets for exact compatibility in your application.

Pinout

The C3M0016120K is a 1200V, 16mΩ silicon carbide (SiC) MOSFET from Wolfspeed in a TO-247-4L package.
- Pin Count: 4 pins (standard TO-247-4L configuration).
- Functions:
1. Gate (G) – Controls switching.
2. Drain (D) – High-voltage power terminal.
3. Source (S) – Current return path.
4. Kelvin Source (Sₖ) – Separate sense terminal for improved gate drive accuracy, reducing parasitic inductance effects.
This MOSFET is optimized for high-frequency, high-efficiency applications like EV chargers, solar inverters, and industrial power supplies. The Kelvin connection enhances switching performance.

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