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CSD17305Q5A
+BOMMOSFET N-CH 30V 29A/100A 8VSON
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Nhà sản xuấtTexas Dụng cụ
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Ông. Phần #CSD17305Q5A
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | Texas Instruments |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | NexFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 29A (Ta), 100A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 3V, 8V |
| Rds On(Max) @ Id Vgs | 3.4mOhm @ 30A, 8V |
| Vgs(th)(Max) @ Id | 1.6V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 18.3 nC @ 4.5 V |
| Vgs(Max) | +10V, -8V |
| Input Capacitance(Ciss)(Max) @ Vds | 2600 pF @ 15 V |
| Power Dissipation (Max) | 3.1W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-VSONP (5x6) |
Tổng quan
Description
CSD17305Q5A is a TI NexFET N-channel power MOSFET (enhancement mode) designed for high-efficiency switching in power-management circuits.
- Purpose: used in fast, low-loss switching applications such as DC-DC buck converters (including synchronous regulators) and power-path/load-switch circuits.
- Key traits: low gate charge, low on-resistance, and strong switching performance for compact, high-frequency designs.
- Packaging: available in small surface-mount options; exact package variant varies by part revision.
- Design notes: driven from a suitable gate-source voltage (often logic-level), with attention to heat dissipation, PCB layout, and the device’s safe operating area and thermal limits.
- What to look up: for exact Vds, Id, Rds(on), Qg, and recommended operating conditions, consult the CSD17305Q5A datasheet and TI product page.
If you’re selecting it for a design, the datasheet will confirm the precise electrical specs and packaging.
- Purpose: used in fast, low-loss switching applications such as DC-DC buck converters (including synchronous regulators) and power-path/load-switch circuits.
- Key traits: low gate charge, low on-resistance, and strong switching performance for compact, high-frequency designs.
- Packaging: available in small surface-mount options; exact package variant varies by part revision.
- Design notes: driven from a suitable gate-source voltage (often logic-level), with attention to heat dissipation, PCB layout, and the device’s safe operating area and thermal limits.
- What to look up: for exact Vds, Id, Rds(on), Qg, and recommended operating conditions, consult the CSD17305Q5A datasheet and TI product page.
If you’re selecting it for a design, the datasheet will confirm the precise electrical specs and packaging.
Features
CSD17305Q5A features (summary):
- N-channel enhancement-mode MOSFET
- VDS: 30 V
- Extremely low RDS(on): typ ~5 mΩ at VGS=4.5 V; lower at higher VGS (approx 3 mΩ at 10 V)
- Continuous drain current: typically around 7–8 A
- Gate threshold: approx 0.6–1.5 V (logic-level drive)
- Low gate charge and input capacitance for fast switching
- Small 3×3 mm DFN/QFN-8 package
- Pb-free, RoHS compliant
- Extended operating temperature range (e.g., -40°C to +125°C)
Notes:
- Values are datasheet typicals; refer to the datasheet for exact (max) ratings and conditions.
- N-channel enhancement-mode MOSFET
- VDS: 30 V
- Extremely low RDS(on): typ ~5 mΩ at VGS=4.5 V; lower at higher VGS (approx 3 mΩ at 10 V)
- Continuous drain current: typically around 7–8 A
- Gate threshold: approx 0.6–1.5 V (logic-level drive)
- Low gate charge and input capacitance for fast switching
- Small 3×3 mm DFN/QFN-8 package
- Pb-free, RoHS compliant
- Extended operating temperature range (e.g., -40°C to +125°C)
Notes:
- Values are datasheet typicals; refer to the datasheet for exact (max) ratings and conditions.
Pinout
- Pin count: 6 pins (WSON/SON-6 style package).
- Function: N-channel enhancement-mode power MOSFET (NexFET) used as a power switch in DC circuits (high-side/low-side switch in regulators and power paths). The package provides multiple drain/source pins for better current handling.
- Function: N-channel enhancement-mode power MOSFET (NexFET) used as a power switch in DC circuits (high-side/low-side switch in regulators and power paths). The package provides multiple drain/source pins for better current handling.
Manufacturer
- Manufacturer: Texas Instruments Incorporated (TI).
- What kind of company: A multinational American semiconductor company that designs and manufactures analog, mixed-signal, and embedded processing ICs (including power MOSFETs) and other semiconductor products.
- What kind of company: A multinational American semiconductor company that designs and manufactures analog, mixed-signal, and embedded processing ICs (including power MOSFETs) and other semiconductor products.
Application
CSD17305Q5A is a 5A N-channel NexFET MOSFET. Common application areas include:
- Synchronous buck DC-DC converters and other SMPS in CPUs/GPUs, notebooks, tablets, and embedded systems
- Load switches, high-side/low-side switches, and hot-swap protection in consumer electronics, servers, telecom, and automotive power rails
- Motor drive and control circuits for small to mid-size motors
- Battery-powered devices and IoT requiring efficient, compact switching
Essentially, it’s used wherever a fast, efficient power-switching MOSFET is needed in modern power-management designs.
- Synchronous buck DC-DC converters and other SMPS in CPUs/GPUs, notebooks, tablets, and embedded systems
- Load switches, high-side/low-side switches, and hot-swap protection in consumer electronics, servers, telecom, and automotive power rails
- Motor drive and control circuits for small to mid-size motors
- Battery-powered devices and IoT requiring efficient, compact switching
Essentially, it’s used wherever a fast, efficient power-switching MOSFET is needed in modern power-management designs.
Package
CSD17305Q5A comes in a 6‑pin WSON (SON‑6) package with an exposed pad.
