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CSD18532NQ5B
+BOMCSD18532NQ5B - 60V, N CH NEXFET
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Nhà sản xuấtTexas Dụng cụ
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Ông. Phần #CSD18532NQ5B
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Bảng dữ liệu CSD18532NQ5B DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | Rochester Electronics, LLC |
| Package / Case | Bulk |
| Series | NexFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 22A (Ta), 100A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 3.4mOhm @ 25A, 10V |
| Vgs(th)(Max) @ Id | 3.4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 64 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 5340 pF @ 30 V |
| Power Dissipation (Max) | 3.2W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-VSON-CLIP (5x6) |
Tổng quan
Description
CSD18532NQ5B is a specific type of power MOSFET manufactured by Texas Instruments. It is designed for use in high-efficiency power management applications. Key features of the CSD18532NQ5B include low on-resistance, which minimizes energy loss, and high-speed switching capabilities, making it suitable for DC-DC converters, synchronous rectification, and other power applications in computing and telecommunications.
The MOSFET is housed in a SON 5 mm × 6 mm package, which allows for efficient thermal management and space-saving in electronic design. It is built using NexFET technology, aimed at providing enhanced performance in power loss reduction and switching efficiency. With a maximum operating voltage typically around 60V and a continuous current capability, the CSD18532NQ5B is versatile for various load conditions.
This component is part of Texas Instruments’ extensive portfolio of power transistors, offering reliability and robustness for designers looking to optimize power circuits in modern electronic devices.
The MOSFET is housed in a SON 5 mm × 6 mm package, which allows for efficient thermal management and space-saving in electronic design. It is built using NexFET technology, aimed at providing enhanced performance in power loss reduction and switching efficiency. With a maximum operating voltage typically around 60V and a continuous current capability, the CSD18532NQ5B is versatile for various load conditions.
This component is part of Texas Instruments’ extensive portfolio of power transistors, offering reliability and robustness for designers looking to optimize power circuits in modern electronic devices.
Equivalent
The CSD18532NQ5B is a NexFET power MOSFET from Texas Instruments. Equivalent products might include MOSFETs with similar voltage and current ratings from other manufacturers, such as:
1. IRF3708 - from International Rectifier (Infineon)
2. NTMFS4935N - from ON Semiconductor
3. NVMFS5C460NL - from ON Semiconductor
4. FDMS86101 - from Fairchild Semiconductor (ON Semiconductor)
Always verify specifications like RDS(on), Vgs, package type, and thermal performance to ensure compatibility.
1. IRF3708 - from International Rectifier (Infineon)
2. NTMFS4935N - from ON Semiconductor
3. NVMFS5C460NL - from ON Semiconductor
4. FDMS86101 - from Fairchild Semiconductor (ON Semiconductor)
Always verify specifications like RDS(on), Vgs, package type, and thermal performance to ensure compatibility.
Features
The CSD18532NQ5B is a N-channel MOSFET designed by Texas Instruments. Key features include:
1. Voltage & Current Ratings:
- Drain-Source Voltage (V_DS): 25V
- Continuous Drain Current (I_D): Around 6.9A at 70°C
2. Performance:
- Low On-Resistance (R_DS(on)): Approximately 16.2 mΩ at 4.5V gate voltage
- High efficiency with reduced power loss
3. Package:
- Comes in a small, compact SON 5x6 mm package, suitable for space-constrained applications
4. Thermal Characteristics:
- Good thermal performance, supporting effective heat dissipation
5. Applications:
- Ideal for applications in power management, such as DC-DC converters, load switches, and synchronous rectification.
6. Gate Charge:
- Low gate charge for fast switching performance
The CSD18532NQ5B is designed for high-efficiency operation in electronic applications, offering robust performance in a compact form factor.
1. Voltage & Current Ratings:
- Drain-Source Voltage (V_DS): 25V
- Continuous Drain Current (I_D): Around 6.9A at 70°C
2. Performance:
- Low On-Resistance (R_DS(on)): Approximately 16.2 mΩ at 4.5V gate voltage
- High efficiency with reduced power loss
3. Package:
- Comes in a small, compact SON 5x6 mm package, suitable for space-constrained applications
4. Thermal Characteristics:
- Good thermal performance, supporting effective heat dissipation
5. Applications:
- Ideal for applications in power management, such as DC-DC converters, load switches, and synchronous rectification.
6. Gate Charge:
- Low gate charge for fast switching performance
The CSD18532NQ5B is designed for high-efficiency operation in electronic applications, offering robust performance in a compact form factor.
Pinout
The CSD18532NQ5B is a NexFET™ Power MOSFET from Texas Instruments. It is typically used in power management applications due to its efficiency and performance characteristics.
The CSD18532NQ5B comes in a SON 5 mm x 6 mm package with eight pins. Here is a brief overview of its pin functions:
1. Pins 1, 2, 3: Source (S) - These pins are connected together internally and are typically connected to the ground or the negative side of the load.
2. Pin 4: Gate (G) - This pin is used to turn the MOSFET on or off. It is connected to the control voltage.
3. Pins 5, 6, 7, 8: Drain (D) - These pins are connected together internally and are typically connected to the positive side of the load or supply voltage.
The device's design focuses on low on-resistance and fast switching, making it suitable for high-efficiency power conversion applications. Always refer to the manufacturer's datasheet for precise specifications and operational guidance.
The CSD18532NQ5B comes in a SON 5 mm x 6 mm package with eight pins. Here is a brief overview of its pin functions:
1. Pins 1, 2, 3: Source (S) - These pins are connected together internally and are typically connected to the ground or the negative side of the load.
2. Pin 4: Gate (G) - This pin is used to turn the MOSFET on or off. It is connected to the control voltage.
3. Pins 5, 6, 7, 8: Drain (D) - These pins are connected together internally and are typically connected to the positive side of the load or supply voltage.
The device's design focuses on low on-resistance and fast switching, making it suitable for high-efficiency power conversion applications. Always refer to the manufacturer's datasheet for precise specifications and operational guidance.
Manufacturer
The CSD18532NQ5B is manufactured by Texas Instruments. Texas Instruments (TI) is an American technology company that designs and manufactures semiconductors and various integrated circuits, which it sells to electronics designers and manufacturers globally. TI is known for its strong emphasis on innovation and development in the electronics sector, providing solutions across areas such as analog chips, embedded processors, digital light processing, and education technology. TI has a diverse product portfolio, serving industries like automotive, industrial, personal electronics, communications equipment, and enterprise systems. The company is regarded as a leader in the semiconductor industry, with particular strengths in analog semiconductor design and manufacturing.
Application
The CSD18532NQ5B is a power MOSFET typically used in applications requiring efficient power management and high-speed switching. It is commonly employed in areas such as DC-DC converters, power supply units, motor drives, and battery management systems. Its characteristics make it suitable for use in server and telecom power systems, industrial equipment, and consumer electronics that demand low on-resistance and fast switching capabilities to enhance overall system efficiency and thermal performance.
Package
The CSD18532NQ5B is a power MOSFET with a package type of SON 5x6mm (also known as DualCool or PowerPAK SO-8). This package type is designed for improved thermal performance and compact design suitable for high-efficiency power management applications.
