Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | NexFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 200A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 2mOhm @ 100A, 10V |
| Vgs(th)(Max)@Id | 2.4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 81 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 6620 pF @ 30 V |
| PowerDissipation(Max) | 300W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DDPAK/TO-263-3 |
Tổng quan
Description
CSD18535KTT is a specific type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used in electronic circuits for switching and amplification. This particular component is known for its high efficiency and fast switching capabilities, making it suitable for use in power management applications, such as DC-DC converters, motor drivers, and other power electronic systems.
Key features of the CSD18535KTT include a low on-resistance, which minimizes power loss and heat generation, and a high current-carrying capacity. It is typically housed in a TO-220 or similar package, which provides good thermal performance, facilitating heat dissipation. The device is designed to handle significant power levels efficiently and is often chosen for its robustness and reliability in demanding environments.
Engineers and designers select CSD18535KTT MOSFETs when they require a component that can handle high speeds and high currents with minimal power loss, contributing to the overall efficiency and performance of electronic systems.
Key features of the CSD18535KTT include a low on-resistance, which minimizes power loss and heat generation, and a high current-carrying capacity. It is typically housed in a TO-220 or similar package, which provides good thermal performance, facilitating heat dissipation. The device is designed to handle significant power levels efficiently and is often chosen for its robustness and reliability in demanding environments.
Engineers and designers select CSD18535KTT MOSFETs when they require a component that can handle high speeds and high currents with minimal power loss, contributing to the overall efficiency and performance of electronic systems.
Equivalent
The CSD18535KTT is a N-channel MOSFET from Texas Instruments. Equivalent products can include similar N-channel MOSFETs from other manufacturers like the IRF540N from Infineon, the FQP30N06L from ON Semiconductor, and the STP55NF06 from STMicroelectronics. When selecting an equivalent, ensure key parameters such as voltage, current ratings, Rds(on), and package type match your design requirements. Always verify with the datasheets for compatibility.
Features
The CSD18535KTT is a N-channel power MOSFET from Texas Instruments, designed for high-efficiency power management applications. Here are its key features:
1. Voltage and Current Ratings: It typically operates with a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) of around 100A, depending on the specific package and thermal conditions.
2. Low On-Resistance: The MOSFET exhibits low R_DS(on), which minimizes power loss and improves efficiency, making it suitable for high-performance applications.
3. Package Type: It often comes in a TO-220 or similar package, which provides efficient thermal management and ease of mounting.
4. Thermal Performance: Designed with good thermal characteristics, it supports high current applications while maintaining reliability.
5. Applications: Commonly used in synchronous rectification, DC-DC converters, motor control, and other power management systems.
6. Robust Design: Built to handle high-stress electrical environments, ensuring durability and long operational life.
These features make the CSD18535KTT a versatile choice for various applications requiring efficient power handling and management.
1. Voltage and Current Ratings: It typically operates with a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) of around 100A, depending on the specific package and thermal conditions.
2. Low On-Resistance: The MOSFET exhibits low R_DS(on), which minimizes power loss and improves efficiency, making it suitable for high-performance applications.
3. Package Type: It often comes in a TO-220 or similar package, which provides efficient thermal management and ease of mounting.
4. Thermal Performance: Designed with good thermal characteristics, it supports high current applications while maintaining reliability.
5. Applications: Commonly used in synchronous rectification, DC-DC converters, motor control, and other power management systems.
6. Robust Design: Built to handle high-stress electrical environments, ensuring durability and long operational life.
These features make the CSD18535KTT a versatile choice for various applications requiring efficient power handling and management.
Pinout
The CSD18535KTT is a N-channel MOSFET from Texas Instruments. It typically comes in a standard TO-220 package. Here are the key points regarding its pin count and function:
- Pin Count: The device has 3 pins.
1. Gate (G): Used to control the MOSFET's conduction state.
2. Drain (D): The point where the load is connected; current flows from drain to source when the MOSFET is on.
3. Source (S): The terminal connected to ground or the return path of the circuit.
- Function: This MOSFET is designed for high-efficiency power switching applications. It features low Rds(on) for reduced conduction losses and high-speed switching capabilities. It is suitable for a range of applications, including DC-DC converters, motor drives, and power management systems. It operates well in high-current and low-voltage applications due to its robust design and performance characteristics.
For detailed specifications and electrical characteristics, refer to the official datasheet from Texas Instruments.
- Pin Count: The device has 3 pins.
1. Gate (G): Used to control the MOSFET's conduction state.
2. Drain (D): The point where the load is connected; current flows from drain to source when the MOSFET is on.
3. Source (S): The terminal connected to ground or the return path of the circuit.
- Function: This MOSFET is designed for high-efficiency power switching applications. It features low Rds(on) for reduced conduction losses and high-speed switching capabilities. It is suitable for a range of applications, including DC-DC converters, motor drives, and power management systems. It operates well in high-current and low-voltage applications due to its robust design and performance characteristics.
For detailed specifications and electrical characteristics, refer to the official datasheet from Texas Instruments.
Manufacturer
The CSD18535KTT is manufactured by Texas Instruments (TI). Texas Instruments is a global semiconductor company that designs and manufactures a variety of electronic components, including integrated circuits and other semiconductor devices. They serve industries such as consumer electronics, automotive, industrial electronics, and more. TI is known for its focus on innovation and development in the field of analog and embedded processing products.
Application
The CSD18535KTT is a power MOSFET known for its efficiency and low on-resistance. It is commonly used in applications such as DC-DC converters, power management systems, motor drives, and load switches. Its high efficiency makes it suitable for battery-powered devices and portable electronics where minimizing power loss is crucial. Additionally, it can be used in industrial automation, automotive electronics, and renewable energy systems like solar inverters, where robust performance and reliability are required. The device's small package size also allows for compact design implementations.
Package
The CSD18535KTT is a power MOSFET from Texas Instruments, and it typically comes in a TO-220 package type. The TO-220 package is a through-hole design commonly used for high-power components, providing good heat dissipation.
