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CSD18540Q5B
+BOMMOSFET N-CH 60V 100A 8VSON
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Nhà sản xuấtTexas Dụng cụ
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Ông. Phần #CSD18540Q5B
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Gói PowerTDFN-8
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Có sẵn6018
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | NexFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 100A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 2.2mOhm @ 28A, 10V |
| Vgs(th)(Max)@Id | 2.3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 53 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4230 pF @ 30 V |
| PowerDissipation(Max) | 3.1W (Ta), 195W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-VSON-CLIP (5x6) |
Tổng quan
Description
Key features of the CSD18540Q5B include a low on-resistance, which minimizes power loss and heat generation, and a fast switching speed, which enhances the overall efficiency of the device in high-frequency applications. It is typically used in applications like power supplies, motor drives, and other power conversion systems.
This MOSFET is packaged in a compact, thermally enhanced package, which helps in dissipating heat efficiently, thereby ensuring reliable operation even at higher loads. Its design supports both high-current and high-voltage operations, making it a versatile choice for many industrial and consumer electronic applications. Always refer to the manufacturer's datasheet for detailed specifications and usage guidelines.
Equivalent
1. IRF540N from Infineon Technologies
2. FQP30N06L from ON Semiconductor
3. IPD50N06S4L-13 from Infineon Technologies
4. NTD4906N from ON Semiconductor
While these are similar, always check the datasheets for specific electrical characteristics and package compatibility to ensure they meet your requirements.
Features
1. Voltage and Current Ratings: It has a drain-to-source voltage (V_DS) of 40V and can handle a continuous drain current (I_D) of up to 119A.
2. On-Resistance: The MOSFET features a very low on-resistance (R_DS(on)) of 1.8 mΩ, which enables high efficiency by reducing power loss during operation.
3. Package: It comes in a compact 5x6 mm SON (Small Outline No-lead) package, which facilitates efficient thermal management and saves space on the PCB.
4. Thermal Performance: It has excellent thermal performance, making it suitable for high-power applications.
5. Gate Charge: The device offers a low total gate charge (Q_g) of around 37 nC, which allows for fast switching speeds and reduced power consumption.
6. Applications: Suitable for applications such as power management, synchronous rectification, and other high-efficiency power conversion tasks.
These features make the CSD18540Q5B an ideal choice for designers looking to optimize power efficiency in various electronic applications.
Pinout
Manufacturer
Application
1. DC-DC Converters: Used in power management systems for efficient voltage regulation.
2. Motor Drives: Ideal for controlling small motors in industrial and consumer electronics.
3. Switching Power Supplies: Enhances performance in power supply units by providing reliable switching.
4. Load Switches: Utilized in controlling power delivery to various loads.
5. LED Lighting: Supports efficient LED driver circuits for improved energy use.
6. Battery Management Systems: Assists in efficient charging and discharging processes.
These applications benefit from the MOSFET's low on-resistance and fast switching capabilities.