CSD19532Q5B

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CSD19532Q5B

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MOSFET N-CH 100V 100A 8VSON

  • Nhà sản xuấtTexas Dụng cụ

  • Ông. Phần #CSD19532Q5B

  • Gói WSON-8

  • Có sẵn4433

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Thông số kỹ thuật

thuộc tính Giá trị
Package Tape & Reel (TR),Cut Tape (CT)
Series NexFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 100A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V
RdsOn(Max)@IdVgs 4.9mOhm @ 17A, 10V
Vgs(th)(Max)@Id 3.2V @ 250µA
GateCharge(Qg)(Max)@Vgs 62 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 4810 pF @ 50 V
PowerDissipation(Max) 3.1W (Ta), 195W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-VSON-CLIP (5x6)

Tổng quan

Description

CSD19532Q5B likely refers to a specific course code or identifier used within an educational institution. Without specific context or access to proprietary databases, I cannot provide detailed information about this course. Generally, course codes like CSD19532Q5B are used to organize and differentiate between different offerings within a curriculum, such as computer science, engineering, or another academic field. Courses typically include lectures, labs, or practical sessions designed to provide students with knowledge and skills in a particular area. If you are looking for detailed information about what CSD19532Q5B entails, such as its syllabus, objectives, or prerequisites, I suggest consulting your institution's course catalog or contacting the relevant department directly. They can provide authoritative and up-to-date information tailored to your needs.

Equivalent

The CSD19532Q5B is a N-channel MOSFET from Texas Instruments. Equivalent products include:
1. Infineon Technologies OptiMOS™ BSC123N08NS5
2. ON Semiconductor NTMFS5C628NL
3. Vishay Siliconix SiR462DP
These equivalents have similar specifications like voltage, current rating, and package type. Always verify compatibility with your application requirements.

Features

The CSD19532Q5B is a power MOSFET manufactured by Texas Instruments, designed for high-efficiency applications. Key features include:
1. N-Channel MOSFET: Utilizes an N-channel configuration for efficient current flow and control.
2. Low On-Resistance: Offers very low R_DS(on) to minimize power loss and enhance efficiency, especially in high-current applications.
3. High Current Capability: Supports a high continuous drain current, suitable for demanding power applications.
4. Fast Switching: Provides rapid switching speeds, enabling efficient power conversion and reducing transition losses.
5. Thermal Performance: Comes in a compact 5x6 mm package with improved thermal characteristics for effective heat dissipation.
6. Gate Charge: Features low gate charge, which reduces the drive requirements and improves efficiency.
7. Robust Design: Built to withstand high voltages and currents, making it reliable for use in various industrial and consumer electronics.
8. Enhanced ESD Protection: Offers protection against electrostatic discharge, enhancing its durability and lifespan.
These features make the CSD19532Q5B suitable for applications such as power supply units, motor drives, and other power management systems.

Pinout

The CSD19532Q5B is a power MOSFET from Texas Instruments. It is typically housed in a SON 5mm x 6mm package with a total of 8 pins. Here is a concise description of its pin functions:
1. Source (S): The source terminals are connected together internally and are typically found on multiple pins. These are used to connect the source of the MOSFET to the circuit.
2. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate determines whether the MOSFET is in the on or off state.
3. Drain (D): The drain terminals are also connected internally and are usually available on multiple pins, often connected to the thermal pad on the package. These pins connect the drain of the MOSFET to the circuit.
4. Thermal Pad: The exposed pad on the bottom is primarily used for heat dissipation and is generally connected to the drain electrically.
The CSD19532Q5B is designed for high-efficiency power conversion applications, with features like low R_DS(on) to minimize power loss and heat generation.

Manufacturer

The CSD19532Q5B is manufactured by Texas Instruments (TI), which is a global semiconductor company. Texas Instruments is known for designing and manufacturing a wide range of semiconductor products, including integrated circuits, microcontrollers, and power management solutions. The company operates in various sectors such as industrial, automotive, personal electronics, and communications equipment. TI focuses on innovation and developing technologies that are integral to modern electronics, providing essential components that enable various electronic systems and devices.

Application

The CSD19532Q5B is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) known for its efficiency and low on-resistance. Its primary application areas include:
1. Power Management: Used in DC-DC converters and voltage regulation modules for efficient energy distribution.
2. Switching Applications: Ideal for high-frequency switching in power supplies and motor control.
3. Automotive Systems: Used in electronic control units for efficient power delivery and management.
4. Consumer Electronics: Powers devices like laptops, tablets, and smartphones.
5. Industrial Equipment: Supports automation and control systems requiring reliable power switching.
Its compact size and robust performance make it suitable for high-efficiency applications.

Package

The CSD19532Q5B is a MOSFET device from Texas Instruments and it comes in a SO-8 package, which is a surface-mount package commonly used for electronic components.

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