Hình ảnh chỉ để tham khảo
CSD86360Q5D
+BOMMOSFET 2N-CH 25V 50A 8LSON
-
Nhà sản xuấtTexas Dụng cụ
-
Ông. Phần #CSD86360Q5D
-
Có sẵn4536
365 Đảm bảo chất lượng ngày
7*24 giờ dịch vụ quarantee
90-Bảo hành sau bán hàng ngày
Bảo hành sản phẩm chính xác
Thông số kỹ thuật
| thuộc tính | Giá trị |
| Series | NexFET™ |
| Part Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 50A |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12.6nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 2060pF @ 12.5 |
| Power - Max | 13W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerLDFN |
| Supplier Device Package | 8-LSON (5x6) |
| Base Product Number | CSD86360Q5 |
Tổng quan
Description
CSD86360Q5D is a highly integrated power stage device designed by Texas Instruments for applications requiring efficient and reliable DC-DC conversion. It is particularly suited for use in synchronous buck converters, providing a compact solution for power management in various electronic devices, including laptops, desktops, and industrial applications.
Key features of CSD86360Q5D include its high efficiency, which minimizes heat generation, and its ability to deliver high output currents while maintaining compact dimensions. The device integrates both high-side and low-side MOSFETs, simplifying design and reducing the number of external components needed.
It also includes advanced protection features such as overcurrent protection and thermal shutdown to enhance system reliability. With its robust performance over a wide range of input voltages, the CSD86360Q5D is an excellent choice for designers looking to optimize power delivery in modern electronics.
Key features of CSD86360Q5D include its high efficiency, which minimizes heat generation, and its ability to deliver high output currents while maintaining compact dimensions. The device integrates both high-side and low-side MOSFETs, simplifying design and reducing the number of external components needed.
It also includes advanced protection features such as overcurrent protection and thermal shutdown to enhance system reliability. With its robust performance over a wide range of input voltages, the CSD86360Q5D is an excellent choice for designers looking to optimize power delivery in modern electronics.
Equivalent
The CSD86360Q5D chip is a power stage MOSFET designed primarily for synchronous buck converters. Equivalent or alternative products include the Texas Instruments CSD86360Q5M, Infineon's IRMPC60, and ON Semiconductor's NCP81239. It's essential to check specifications such as input voltage, current ratings, and thermal performance for compatibility in specific applications.
Features
The CSD86360Q5D is a high-performance, power MOSFET designed for various applications, including power management and DC-DC converters. Key features include:
1. Type: N-channel MOSFET, ideal for high-efficiency switching applications.
2. Voltage Rating: Capable of handling a maximum drain-source voltage (V_DS) of 60V.
3. Current Rating: Supports continuous drain current (I_D) of up to 50A, making it suitable for demanding power applications.
4. R_DS(on): Offers low on-resistance (R_DS(on)) to minimize conduction losses and improve efficiency.
5. Packaging: Available in a compact DPAK package, which aids in thermal management and ease of integration.
6. Gate Threshold Voltage: Features a low gate threshold voltage (V_GS(th)), allowing for efficient driving.
7. Fast Switching: Designed for fast switching speeds, making it suitable for high-frequency applications.
8. Thermal Performance: Excellent thermal characteristics ensure reliable operation under various conditions.
These features make the CSD86360Q5D an excellent choice for engineers looking for efficiency and reliability in their power systems.
1. Type: N-channel MOSFET, ideal for high-efficiency switching applications.
2. Voltage Rating: Capable of handling a maximum drain-source voltage (V_DS) of 60V.
3. Current Rating: Supports continuous drain current (I_D) of up to 50A, making it suitable for demanding power applications.
4. R_DS(on): Offers low on-resistance (R_DS(on)) to minimize conduction losses and improve efficiency.
5. Packaging: Available in a compact DPAK package, which aids in thermal management and ease of integration.
6. Gate Threshold Voltage: Features a low gate threshold voltage (V_GS(th)), allowing for efficient driving.
7. Fast Switching: Designed for fast switching speeds, making it suitable for high-frequency applications.
8. Thermal Performance: Excellent thermal characteristics ensure reliable operation under various conditions.
These features make the CSD86360Q5D an excellent choice for engineers looking for efficiency and reliability in their power systems.
Pinout
The CSD86360Q5D is a Power MOSFET from Texas Instruments, specifically designed for high-efficiency applications. It features a total of 5 pins. The pin configuration and their functions are as follows:
1. G (Gate): Controls the MOSFET's switching on/off.
2. D (Drain): The output terminal where current flows out.
3. S (Source): The terminal through which current enters the MOSFET.
These pins are typically used in power management and conversion applications, such as DC-DC converters and battery management systems, due to their low R_DS(on) and fast switching characteristics. The device is optimized for high current and efficiency, making it suitable for various power electronic designs.
1. G (Gate): Controls the MOSFET's switching on/off.
2. D (Drain): The output terminal where current flows out.
3. S (Source): The terminal through which current enters the MOSFET.
These pins are typically used in power management and conversion applications, such as DC-DC converters and battery management systems, due to their low R_DS(on) and fast switching characteristics. The device is optimized for high current and efficiency, making it suitable for various power electronic designs.
Manufacturer
The CSD86360Q5D is manufactured by Texas Instruments (TI), a global semiconductor company headquartered in Dallas, Texas. Texas Instruments designs and manufactures a wide range of analog and embedded processing chips, serving various markets including industrial, automotive, personal electronics, and communications. The company is well-known for its innovation in analog technologies and power management solutions, particularly in applications that require high efficiency and performance. TI is also recognized for its educational initiatives, providing resources and support for engineering students and professionals.
Application
The CSD86360Q5D is a high-performance power MOSFET designed for applications in DC-DC conversion, particularly in synchronous buck converters. It is commonly used in power management for computing, telecommunications, and industrial applications. Its features include low on-resistance and high efficiency, making it suitable for power supply designs in laptops, servers, and networking equipment. Additionally, it can be utilized in battery management systems and renewable energy systems, such as solar inverters, to enhance energy conversion efficiency. Overall, it is ideal for applications requiring efficient power delivery and thermal performance.
Package
The CSD86360Q5D is packaged in a VQFN (Very Thin Quad Flat No-lead) package type. This package is designed for efficient thermal performance and small footprint in applications such as power management and DC-DC converters.
