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CSD87351Q5D
+BOMMOSFET 2N-CH 30V 32A 8LSON
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Nhà sản xuấtTexas Dụng cụ
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Ông. Phần #CSD87351Q5D
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Gói PowerLDFN-8
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Có sẵn2861
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | NexFET™ |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 30V |
| Current-ContinuousDrain(Id)@25°C | 32A |
| RdsOn(Max)@IdVgs | 7.6mOhm @ 20A, 8V |
| Vgs(th)(Max)@Id | 2.1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 7.7nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 1255pF @ 15V |
| Power-Max | 12W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-PowerLDFN |
Tổng quan
Description
The introduction to such a device would typically cover its key specifications and applications. These might include:
- Voltage and Current Ratings: The maximum voltage and current the device can handle.
- Efficiency: How efficiently the device operates, often a critical factor for power management components.
- Switching Frequency: Relevant for devices involved in power conversion to indicate how fast they can switch states.
- Thermal Performance: How well the device dissipates heat, which is crucial for reliability.
- Applications: Common uses might include consumer electronics, telecommunications, automotive systems, or industrial equipment.
For precise specifications, consulting the official datasheet or manufacturer's documentation is recommended, as it provides in-depth details specific to the device model.
Equivalent
Features
1. Integrated Solution: Combines a high-side and a low-side MOSFET with a driver, optimizing performance and simplifying design.
2. Efficiency: Offers high efficiency with low switching losses, making it ideal for applications requiring minimal power loss.
3. Switching Frequency: Supports high-frequency operations, allowing for smaller and more efficient power supply designs.
4. Footprint: Comes in a compact 5x6 mm DualCool™ package, reducing board space.
5. Thermal Performance: Designed for excellent thermal management with a low thermal resistance package that enhances heat dissipation.
6. Protection Features: Includes built-in protection mechanisms such as under-voltage lockout, over-current protection, and thermal shutdown to ensure reliable operation.
7. Applications: Suitable for use in data centers, telecom infrastructure, and any other applications requiring efficient power management.
8. Design Flexibility: Easy integration with other components in a power management system, facilitating streamlined design processes.
Pinout
1. VSW (Pins 1-3): These pins are the switching node and are connected to the output inductor.
2. BOOT (Pin 4): This pin is the bootstrap input for the high-side FET driver, used to provide the necessary gate drive voltage.
3. VIN (Pins 5-6): These are the input voltage pins where the input power is supplied to the device.
4. GND (Pins 7-8): These are the ground pins, providing the return path for the driver and power FETs.
5. PGND (Exposed Pad): This is the power ground and is the primary thermal path for heat dissipation.
Note: It's important to refer to the official datasheet for the most accurate and detailed information about its usage and specifications.