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DMG7430LFG-7
+BOMMOSFET N-CH 30V 10.5A PWRDI3333
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Nhà sản xuấtDiode Tập hợp
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Ông. Phần #DMG7430LFG-7
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Bảng dữ liệu DMG7430LFG-7 DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | Diodes Incorporated |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 10.5A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 11mOhm @ 20A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 26.7 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1281 pF @ 15 V |
| Power Dissipation (Max) | 900mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerDI3333-8 |
Tổng quan
Description
Key features of the DMG7430LFG-7 include its dual N-channel configuration, which allows for compact circuit designs and efficient power management. The MOSFET is known for its low on-resistance and fast switching capabilities, making it suitable for high-efficiency power conversion applications. It typically operates at a low gate threshold voltage, which allows it to be driven by low-voltage circuits.
The DMG7430LFG-7 is often used in consumer electronics, automotive circuits, and other applications where space-saving and energy efficiency are important. Its small package size makes it ideal for surface-mount technology (SMT), facilitating easier integration into printed circuit boards (PCBs).
Overall, the DMG7430LFG-7 is valued for its reliability, performance, and versatility in modern electronic systems.
Equivalent
1. BSS138 - from Vishay or ON Semiconductor
2. 2N7002 - from Fairchild Semiconductor or NXP
3. SI2302 - from Vishay or similar manufacturers
These equivalents should have similar specifications, such as voltage, current ratings, and package type. Always verify compatibility with the specific application requirements.
Features
1. N-Channel MOSFET: It is designed with N-channel technology, which typically offers faster switching speeds and lower on-resistance.
2. Low On-Resistance: The MOSFET has low on-state resistance, improving efficiency by minimizing power losses during operation.
3. High Power Density: The device is designed for high power density applications, allowing for compact designs in power circuits.
4. Fast Switching Performance: Enables high-speed switching, making it suitable for applications requiring quick response times.
5. Small Footprint: It comes in a compact package, ideal for space-constrained applications.
6. Thermal Efficiency: It features efficient thermal management properties to support high-performance applications.
7. RoHS Compliant: The component meets environmental standards for reduced hazardous substances.
These features make the DMG7430LFG-7 suitable for use in various power management and load switch applications, as well as in automotive, industrial, and consumer electronics.
Pinout
1. Gate (G): This pin is used to control the conductive state of the MOSFET. By applying a voltage to the gate, the MOSFET can be turned on or off.
2. Drain (D): This is the terminal where the main current flows out when the MOSFET is in the 'on' state. In a P-channel MOSFET, the current flows from the source to the drain.
3. Source (S): This pin is the terminal where the current enters the MOSFET when it is turned on.
The DMG7430LFG-7 is typically used in applications requiring load switching and power management due to its efficiency in handling low-voltage operations.