DMN3065LW-7

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DMN3065LW-7

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MOSFET N-CH 30V 4A SOT-323

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Thông số kỹ thuật

thuộc tính Giá trị
Supplier Diodes Incorporated
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain(Id) @ 25°C 4A (Ta)
Drive Voltage(Max Rds On Min Rds On) 2.5V, 10V
Rds On(Max) @ Id Vgs 52mOhm @ 4A, 10V
Vgs(th)(Max) @ Id 1.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 11.7 nC @ 10 V
Vgs(Max) ±12V
Input Capacitance(Ciss)(Max) @ Vds 465 pF @ 15 V
Power Dissipation (Max) 770mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-323

Tổng quan

Description

The DMN3065LW-7 is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits for switching and amplification purposes. This particular model is produced by Diodes Incorporated and features an N-channel, enhancement-mode design. Key characteristics of the DMN3065LW-7 include a low ON-resistance, which facilitates efficient switching by minimizing power loss, and a maximum drain-source voltage (V_DS) of 30V, making it suitable for low to moderate voltage applications.
The DMN3065LW-7 also boasts a high-speed switching capability and a maximum continuous drain current (I_D) of approximately 6.5A, allowing it to handle significant current loads in compact packages. The device is typically housed in a package that promotes efficient thermal management, ensuring reliable performance even under higher power conditions. Its design makes it suitable for applications like DC-DC converters, motor drives, and various power management functions in consumer electronics and automotive systems. The DMN3065LW-7's combination of efficiency, speed, and power handling makes it a versatile component in electronic design.

Equivalent

The DMN3065LW-7 is an N-channel MOSFET. Equivalent products include the IRLML6402, BSS138, and 2N7002, which are also N-channel MOSFETs with similar voltage and current ratings. However, ensure to compare specific parameters such as Rds(on), Vgs(th), and package type to verify suitability for your application, as these can vary slightly among different manufacturers.

Features

The DMN3065LW-7 is a dual N-channel MOSFET designed for various electronic applications. Key features include:
1. Low On-Resistance: It offers a low on-state resistance, which ensures high efficiency with reduced power loss during operation.

2. Fast Switching Speed: The device provides rapid switching capabilities, making it suitable for high-speed applications.
3. Compact Package: Housed in a small, space-saving package (typically SO-8), it is ideal for applications where space is limited.
4. Dual MOSFETs: It contains two N-channel MOSFETs in a single package, supporting design flexibility and reducing board space.
5. High Current Handling: Capable of handling significant current levels, it is suitable for power management applications.
6. Wide Operating Temperature Range: Designed to operate across a wide temperature range, ensuring reliability under varied environmental conditions.
7. Rugged Construction: Built to withstand harsh operating conditions, offering robust performance and longevity.
These features make the DMN3065LW-7 suitable for use in power management, load switching, and other general-purpose applications.

Pinout

The DMN3065LW-7 is a dual N-channel MOSFET manufactured by Diodes Incorporated. It comes in a small, surface-mount W-DFN2020-6 package, which has a total of 6 pins. The key functions of this MOSFET include:
1. Switching: It is used for switching and amplifying electronic signals in circuits.
2. Load Switching: Suitable for load switching applications due to its N-channel configuration.
3. Power Management: Used in power management applications, offering low on-resistance and high efficiency.
Each pin serves a specific purpose:
- Pins 1 and 4: Source (S) for each of the two MOSFETs inside the package.
- Pins 2 and 5: Gate (G) for controlling the MOSFETs.
- Pins 3 and 6: Drain (D) for connecting the load or external circuit.
Its small size and efficient operation make it suitable for compact, high-performance applications such as consumer electronics, portable devices, and various other electronic circuits.

Manufacturer

The DMN3065LW-7 is manufactured by Diodes Incorporated. Diodes Incorporated is a global manufacturer and supplier of application-specific standard products within the broad discrete, logic, analog, and mixed-signal semiconductor markets. The company focuses on providing high-quality semiconductor devices for a wide range of applications, including consumer electronics, computing, communications, industrial, and automotive markets. Diodes Incorporated is known for its comprehensive portfolio, which includes products like diodes, rectifiers, transistors, MOSFETs, and other semiconductor components. The company aims to deliver innovative and efficient solutions to meet the demands of its customers across various industries.

Application

The DMN3065LW-7 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in various applications due to its efficiency and compact size. Key application areas include:
1. Power Management: Used in DC-DC converters and voltage regulation modules for efficient power handling.
2. Consumer Electronics: Integrated into devices like laptops, smartphones, and tablets for battery management and power control.
3. Industrial Automation: Utilized in motor control and drive circuits for precise operation.
4. Automotive Systems: Applied in electronic control units and battery management systems.
5. LED Lighting: Used in LED drivers for efficient brightness control.
Its features such as low on-resistance and fast switching capabilities make it suitable for these applications.

Package

The DMN3065LW-7 is a MOSFET packaged in a PowerDI®3333 form factor, which is designed for surface-mount applications. This package type provides efficient thermal performance and compact size suitable for high-density circuit board designs.

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