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DMN6140L-7
+BOMMOSFET N-CH 60V 1.6A SOT-23
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Nhà sản xuấtDiode Tập hợp
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Ông. Phần #DMN6140L-7
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Bảng dữ liệu DMN6140L-7 DataSheet
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Gói SOT-23-3
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 1.6A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 140mOhm @ 1.8A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 8.6 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 315 pF @ 40 V |
| Power Dissipation (Max) | 700mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
Tổng quan
Description
Key features of the DMN6140L-7 include:
1. Type: N-channel MOSFET, which means it allows current flow when a positive voltage is applied to its gate.
2. Low On-Resistance: It has a low R_DS(on), minimizing power loss and improving efficiency.
3. Compact Package: Often comes in a small SOT-23 package, suitable for space-constrained applications.
4. Applications: Ideal for use in power management, load switching, and battery-operated devices.
5. Performance: Offers fast switching speeds and high efficiency, making it suitable for high-frequency applications.
Overall, the DMN6140L-7 provides a reliable solution for designers needing efficient power management in compact, high-performance electronic devices.
Equivalent
1. IRLML6344 by Infineon Technologies
2. FDV301N by ON Semiconductor
3. BS170 by Vishay/Siliconix
4. 2N7002 by various manufacturers
These alternatives offer comparable voltage, current ratings, and package types, but always verify specific characteristics to ensure compatibility with your application.
Features
1. Type: It's an N-channel MOSFET, allowing current to flow when a positive voltage is applied to its gate relative to its source.
2. Voltage and Current Ratings: It typically offers a drain-to-source voltage (V_DS) rating of around 60V and a continuous drain current (I_D) of approximately 4.3A.
3. Low On-Resistance: The device features low on-resistance (R_DS(on)), which reduces power loss and enhances efficiency, making it suitable for power management applications.
4. Package: The DMN6140L-7 is usually available in a compact SOT-23 package, facilitating space-saving designs in circuit boards.
5. Applications: It's commonly used in DC-DC converters, load switches, and battery-powered devices, thanks to its efficiency and compact size.
6. Thermal Performance: Offers good thermal performance for reliable operation in varied conditions.
These features make it a versatile component in electronic circuits, particularly for applications requiring efficient power handling and compact design.
Pinout
1. Gate (G): This pin is used to control the MOSFET’s operation. Applying a voltage to the gate controls the flow of current between the drain and source.
2. Source (S): This pin is connected to the source terminal of the MOSFET, and it is the terminal through which carriers enter the channel.
3. Drain (D): This pin is connected to the drain terminal, and it is the channel through which the output current flows.
The DMN6140L-7 is commonly used for load switching applications and offers a low on-resistance and fast switching speed, making it suitable for a variety of electronic circuit applications. Always refer to the specific datasheet for detailed and accurate specifications.