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FDD16AN08A0
+BOMPOWER FIELD-EFFECT TRANSISTOR, 9
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Nhà sản xuấtCông ty bán dẫn Fairchild
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Ông. Phần #FDD16AN08A0
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Bảng dữ liệu FDD16AN08A0 DataSheet
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Gói TO-252-3
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Có sẵn4152
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Bulk |
| Series | UltraFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 75 V |
| Current - Continuous Drain(Id) @ 25°C | 9A (Ta), 50A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 16mOhm @ 50A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 47 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1874 pF @ 25 V |
| Power Dissipation (Max) | 135W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
Tổng quan
Description
This device is particularly useful for applications requiring efficient power conversion, such as in power supplies, motor drives, and DC-DC converters. It operates with a gate-source voltage that allows it to function effectively in both low and high-side switching configurations. The FDD16AN08A0's compact package design also makes it suitable for space-constrained applications.
Its construction is designed to minimize energy losses and enhance system efficiency, which is critical in applications requiring energy conservation. Additionally, the MOSFET's ruggedness and reliability make it a favorable choice in designs demanding longevity and consistent performance.
Equivalent
Features
1. Voltage and Current Ratings: It typically has a drain-source voltage (V_DS) of around 80V and a continuous drain current (I_D) capability of approximately 16A.
2. Low On-Resistance: The MOSFET offers low R_DS(on), which minimizes power loss and improves efficiency in switching applications.
3. Fast Switching Speed: Designed for high-speed operations, it supports rapid switching, which is essential for efficient power conversion.
4. Thermal Management: It usually comes in a package that supports efficient heat dissipation, such as TO-252, enhancing reliability in high-temperature environments.
5. Applications: This MOSFET is suitable for various applications, including DC-DC converters, motor drives, and load switch circuits.
6. Enhanced Ruggedness: It often features robust avalanche energy capabilities and high-frequency operation resilience.
These features make the FDD16AN08A0 a versatile component in designing efficient electronic circuits for power regulation and management.
Pinout
1. Gate (G): The control terminal that modulates the conductivity between the drain and source.
2. Drain (D): The terminal through which the main current flows from the drain to the source.
3. Source (S): The terminal where the current exits the MOSFET.
For detailed specifications, it's advisable to refer to the manufacturer's datasheet, as this will provide specific electrical characteristics, maximum ratings, and typical applications for the FDD16AN08A0.
Manufacturer
Application
1. Power Supplies: Used in switched-mode power supplies for high efficiency.
2. Motor Drives: Applicable in controlling DC motors with precise speed and torque management.
3. Inverters: Suitable for use in DC to AC conversion in solar inverters.
4. Lighting: Utilized in LED drivers for efficient power control.
5. Battery Management: Employed in battery protection and charging circuits.
6. Automotive Systems: Used in electronic control units (ECUs) for various vehicular functions.
Its low on-resistance and fast switching make it ideal for high-efficiency power management applications.