FDD16AN08A0

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FDD16AN08A0

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POWER FIELD-EFFECT TRANSISTOR, 9

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Thông số kỹ thuật

thuộc tính Giá trị
Package / Case Bulk
Series UltraFET™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain(Id) @ 25°C 9A (Ta), 50A (Tc)
Drive Voltage(Max Rds On Min Rds On) 6V, 10V
Rds On(Max) @ Id Vgs 16mOhm @ 50A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 47 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 1874 pF @ 25 V
Power Dissipation (Max) 135W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount

Tổng quan

Description

The FDD16AN08A0 is a specific model of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) often used in electronic circuits for switching and amplification purposes. Key features of this MOSFET include its ability to handle high currents and voltages with relatively low on-resistance, making it efficient for power management applications. It is part of the Fairchild Semiconductor's lineup, which is now under ON Semiconductor.
This device is particularly useful for applications requiring efficient power conversion, such as in power supplies, motor drives, and DC-DC converters. It operates with a gate-source voltage that allows it to function effectively in both low and high-side switching configurations. The FDD16AN08A0's compact package design also makes it suitable for space-constrained applications.
Its construction is designed to minimize energy losses and enhance system efficiency, which is critical in applications requiring energy conservation. Additionally, the MOSFET's ruggedness and reliability make it a favorable choice in designs demanding longevity and consistent performance.

Equivalent

The FDD16AN08A0 is a power MOSFET. Equivalent products can include MOSFETs with similar specifications such as voltage, current capacity, and package type. Possible equivalents might be the IRF3205 from Infineon, NTD4815N from ON Semiconductor, or STP55NF06 from STMicroelectronics. Always verify specific parameters like voltage rating, current capacity, Rds(on), and package compatibility to ensure they meet your application needs before substituting parts.

Features

The FDD16AN08A0 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in power management applications. Key features include:
1. Voltage and Current Ratings: It typically has a drain-source voltage (V_DS) of around 80V and a continuous drain current (I_D) capability of approximately 16A.
2. Low On-Resistance: The MOSFET offers low R_DS(on), which minimizes power loss and improves efficiency in switching applications.
3. Fast Switching Speed: Designed for high-speed operations, it supports rapid switching, which is essential for efficient power conversion.
4. Thermal Management: It usually comes in a package that supports efficient heat dissipation, such as TO-252, enhancing reliability in high-temperature environments.
5. Applications: This MOSFET is suitable for various applications, including DC-DC converters, motor drives, and load switch circuits.
6. Enhanced Ruggedness: It often features robust avalanche energy capabilities and high-frequency operation resilience.
These features make the FDD16AN08A0 a versatile component in designing efficient electronic circuits for power regulation and management.

Pinout

The FDD16AN08A0 is a specific type of power MOSFET. Typically, MOSFETs like the FDD16AN08A0 are designed for efficient switching applications. This particular model is likely to have a standard pin count for a DPAK or similar package, which usually includes three main pins: Gate (G), Drain (D), and Source (S), along with a fourth pin which is the tab, often connected to the Drain. These pins serve the following functions:
1. Gate (G): The control terminal that modulates the conductivity between the drain and source.
2. Drain (D): The terminal through which the main current flows from the drain to the source.
3. Source (S): The terminal where the current exits the MOSFET.
For detailed specifications, it's advisable to refer to the manufacturer's datasheet, as this will provide specific electrical characteristics, maximum ratings, and typical applications for the FDD16AN08A0.

Manufacturer

The FDD16AN08A0 is manufactured by ON Semiconductor, a company known for designing and producing a wide range of semiconductor components. ON Semiconductor, now known as onsemi, specializes in power and signal management, logic, discrete, and custom devices for applications in automotive, communications, computing, consumer electronics, industrial, LED lighting, medical, and military/aerospace industries. The company focuses on energy-efficient solutions and is a prominent player in the global semiconductor market.

Application

The FDD16AN08A0 is a Power MOSFET designed for applications requiring efficient switching and low conduction losses. Common application areas include:
1. Power Supplies: Used in switched-mode power supplies for high efficiency.
2. Motor Drives: Applicable in controlling DC motors with precise speed and torque management.
3. Inverters: Suitable for use in DC to AC conversion in solar inverters.
4. Lighting: Utilized in LED drivers for efficient power control.
5. Battery Management: Employed in battery protection and charging circuits.
6. Automotive Systems: Used in electronic control units (ECUs) for various vehicular functions.
Its low on-resistance and fast switching make it ideal for high-efficiency power management applications.

Package

The FDD16AN08A0 is a N-channel MOSFET manufactured by ON Semiconductor. It typically comes in a TO-252 (DPAK) surface-mount package. This package type is known for its compact size, allowing for efficient thermal management and ease of use in various electronic applications.

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