FDD7N60NZTM

Hình ảnh chỉ để tham khảo

FDD7N60NZTM

+BOM

MOSFET N-CH 600V 5.5A DPAK

365 Đảm bảo chất lượng ngày

7*24 giờ dịch vụ quarantee

90-Bảo hành sau bán hàng ngày

Bảo hành sản phẩm chính xác

Thông số kỹ thuật

thuộc tính Giá trị
Package Tape & Reel (TR),Cut Tape (CT)
Series UniFET-II™
ProductStatus Last Time Buy
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 5.5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 1.25Ohm @ 2.75A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 17 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 730 pF @ 25 V
PowerDissipation(Max) 90W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-252AA

Tổng quan

Description

The FDD7N60NZTM is a 600V, 7A N-channel MOSFET from ON Semiconductor, designed for high-efficiency power switching applications.
### Key Features:
- Voltage Rating: 600V (Drain-Source)
- Current Rating: 7A (Continuous Drain Current)
- Low On-Resistance (RDS(on)): 1.2Ω (typ.)
- Fast Switching: Optimized for high-speed operation
- Low Gate Charge (Qg): Enhances efficiency in switching circuits
- Avalanche Energy Rated: Improves ruggedness in inductive loads
- Package: TO-252 (DPAK), surface-mountable
### Applications:
- Switched-Mode Power Supplies (SMPS)
- DC-DC Converters
- Motor Control
- LED Lighting Drivers
This MOSFET is ideal for high-voltage, medium-current applications requiring low conduction losses and fast switching performance. Its robust design ensures reliability in demanding power electronics systems.

Equivalent

Equivalent products to the FDD7N60NZTM (600V, 7A N-channel MOSFET) include:
- STP7NK60ZFP (STMicroelectronics)
- IRF740 (Infineon)
- FQP7N60C (Fairchild/ON Semi)
- 7N60 (various brands like Vishay, Toshiba)
Check datasheets for exact specs like RDS(on), gate charge, and package compatibility before substitution.

Features

The FDD7N60NZTM is an N-channel MOSFET with the following key features:
- Voltage Rating: 600V (drain-source, VDSS)
- Current Rating: 7A (continuous drain current, ID)
- Low On-Resistance: 1.2Ω (typical at VGS = 10V)
- Fast Switching: Low gate charge (Qg) and input capacitance (Ciss) for efficient performance
- Avalanche Energy Rated: Enhanced ruggedness for reliability
- Package: TO-252 (DPAK), surface-mount design
- Applications: Power supplies, motor control, lighting, and other high-voltage switching circuits
This MOSFET is optimized for high efficiency and thermal performance in compact designs.

Pinout

The FDD7N60NZTM is a 600V, 7A N-channel MOSFET in a TO-252 (DPAK) package with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – High-voltage terminal (connected to the load).
3. Source (S) – Ground/reference terminal.
Key features:
- Low on-resistance (RDS(on)) for efficient power handling.
- Fast switching for power supply and motor control applications.
- Avalanche energy rated for robustness.
Common uses:
- Switching power supplies.
- DC-DC converters.
- Motor drives.

Package

The FDD7N60NZTM is a 600V N-channel MOSFET in a TO-252 (DPAK) surface-mount package. This package type offers efficient thermal performance and compact size, suitable for power switching applications. It includes a tab for heat dissipation and is commonly used in power supplies, motor control, and DC-DC converters.

Sản phẩm liên quan đến FDD7N60NZTM

  • Trích dẫn nhanh chóng

  • Gửi yêu cầu báo giá của bạn cho FDD7N60NZTM sử dụng biểu mẫu này.chúng tôi sẽ trả lời trong vòng 12 giờ.