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FDMA1023PZ
+BOMSMALL SIGNAL FIELD-EFFECT TRANSI
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Nhà sản xuấtCông ty bán dẫn Fairchild
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Ông. Phần #FDMA1023PZ
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Bảng dữ liệu FDMA1023PZ DataSheet
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Có sẵn7455
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | Rochester Electronics, LLC |
| Package | Bulk |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | 2 P-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 3.7A |
| RdsOn(Max)@IdVgs | 72mOhm @ 3.7A, 4.5V |
| Vgs(th)(Max)@Id | 1.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 12nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 655pF @ 10V |
| Power-Max | 700mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 6-VDFN Exposed Pad |
Tổng quan
Description
In a course like this, students might explore the history and theory of digital media, gain hands-on experience with multimedia software, and learn about the production and post-production processes. The curriculum may cover topics like digital storytelling, media literacy, video editing, and the impact of digital media on society. Students might engage in projects that involve creating digital content, using platforms and technologies that are standard in the industry.
The course often serves as a foundation for more advanced studies, helping students develop critical thinking and technical skills essential for careers in digital media, film production, or related areas. Always refer to the specific course syllabus from the institution for detailed information.
Equivalent
1. FDMA1023NZ - Another Fairchild device with similar characteristics.
2. Si2312DS - By Vishay, offering comparable performance.
3. DMN3027LSD - By Diodes Incorporated, a suitable alternative.
4. 2N7002 - A generic MOSFET with similar specifications, though not identical.
Always verify specifications against your application needs before substituting.
Features
1. N-Channel MOSFET: Facilitates efficient switching and amplification in electronic circuits.
2. Low On-Resistance: Provides reduced power loss and increased efficiency.
3. High-Speed Switching: Enhances performance in applications requiring rapid on/off cycles.
4. Compact Package: Typically found in a Power56 or similar package, suitable for space-constrained applications.
5. Thermal Efficiency: Designed to manage heat effectively, ensuring reliability over extended periods.
6. High Maximum Drain Current: Supports significant current flow, useful for power-intensive applications.
7. Gate Charge and Capacitance: Optimized for minimal charge requirement, enhancing power efficiency.
8. Robust Design: Built to withstand electrical stress and reduce failure rates.
These features make the FDMA1023PZ suitable for various applications, including DC-DC converters, power management in portable devices, and other circuits where efficient power handling is critical.
Pinout
1. Source1 (S1) - Connected to the source terminal of the first MOSFET.
2. Gate1 (G1) - Controls the first MOSFET by applying voltage to this terminal.
3. Drain1 (D1) - The drain terminal for the first MOSFET, connected to load.
4. Source2 (S2) - Connected to the source terminal of the second MOSFET.
5. Gate2 (G2) - Controls the second MOSFET by applying voltage to this terminal.
6. Drain2 (D2) - The drain terminal for the second MOSFET, connected to load.
7. Substrate (Common) - Often internally connected to power ground or another reference point.
8. Body (Common) - Similar purpose as substrate, can be part of the same internal connection.
These specifications make the FDMA1023PZ suitable for applications requiring compact and reliable MOSFET solutions.