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FDMS86200DC
+BOMMOSFET N-CH 150V 9.3A DLCOOL56
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Nhà sản xuấtonsemi
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Ông. Phần #FDMS86200DC
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Bảng dữ liệu FDMS86200DC DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Series | Dual Cool™, PowerTrench® |
| Part Status | Active |
| Base Product Number | FDMS86200 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 9.3A (Ta), 28A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 9.3A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2955 pF @ 75 V |
| Power Dissipation (Max) | 3.2W (Ta), 125W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (5x6) |
| Package | 8-PowerTDFN |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Tổng quan
Description
Key features of the FDMS86200DC include fast switching speeds, high power density, and robust thermal performance, making it suitable for high-frequency and high-power applications. It is typically enclosed in a Power56 package, which provides a compact footprint with excellent heat dissipation capabilities. This MOSFET is often chosen for its reliability and efficiency, helping designers achieve better power management in various electronic devices and systems.
Equivalent
1. NXP BUK9MNN-65PK: Similar specifications, suitable for power management applications.
2. Vishay SiR680DP: Comparable electrical characteristics.
3. Infineon BSC010N04LSI: Matches in terms of performance and application range.
4. STMicroelectronics STL150N4LF6: Offers similar current and voltage ratings.
Ensure compatibility with your specific application requirements before substituting.
Features
1. Low On-Resistance: Offers low R_DS(on) which minimizes conduction losses, enhancing overall efficiency.
2. High Current Capability: Supports high current operations, making it suitable for demanding applications.
3. Fast Switching Speed: Provides rapid switching to reduce transition losses, contributing to efficient performance in high-frequency applications.
4. Thermal Performance: Designed with good thermal characteristics to handle elevated temperatures and improve reliability.
5. Small Form Factor: Its compact design allows for space-saving in compact electronic devices.
6. Enhanced Avalanche Ruggedness: Ensures robustness under high-voltage conditions, preventing device failure during unexpected voltage spikes.
7. RoHS Compliant: Meets environmental standards by being free of hazardous substances.
These features make the FDMS86200DC suitable for various applications, including DC-DC converters, power management in computing and telecom systems, and more.
Pinout
1. Pin 1-3 (Source): These pins are connected to the source terminal of the MOSFET. They are used for the primary current path from the source to the drain.
2. Pin 4 (Gate): This pin controls the MOSFET's switching operation. Applying a voltage here turns the MOSFET on or off.
3. Pin 5-8 (Drain): These pins are connected to the drain terminal. The main current flows from this terminal to the source when the MOSFET is on.
The Dual Cool package allows for top-side cooling along with the bottom-side cooling, improving thermal performance. This type of MOSFET is commonly used in high-efficiency applications due to its low on-resistance and fast switching capabilities.