FDN302P

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FDN302P

+BOM

MOSFET P-CH 20V 2.4A SUPERSOT3

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Thông số kỹ thuật

thuộc tính Giá trị
Package / Case Tape & Reel (TR),Cut Tape (CT),Bulk
Series PowerTrench®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain(Id) @ 25°C 2.4A (Ta)
Drive Voltage(Max Rds On Min Rds On) 2.5V, 4.5V
Rds On(Max) @ Id Vgs 55mOhm @ 2.4A, 4.5V
Vgs(th)(Max) @ Id 1.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 14 nC @ 4.5 V
Vgs(Max) ±12V
Input Capacitance(Ciss)(Max) @ Vds 882 pF @ 10 V
Power Dissipation (Max) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3

Tổng quan

Description

Introduction to FDN302P
FDN302P is a foundational course designed to equip students with essential academic and professional skills. It typically covers topics like critical thinking, research methods, communication, and problem-solving, tailored to support success in higher education and future careers. The course may also include practical components such as project work, presentations, and collaborative learning to enhance real-world applicability.
Ideal for students transitioning into advanced studies, FDN302P fosters analytical abilities, digital literacy, and ethical reasoning. Its interdisciplinary approach ensures relevance across various fields. Check your institution’s syllabus for specifics, as content may vary.

Equivalent

The FDN302P is a P-channel MOSFET. Equivalent alternatives include:
- FDN304P (similar specs, higher current rating)
- SI2301 (compatible P-channel MOSFET)
- AO3401 (widely used alternative)
- IRLML6401 (low-voltage P-MOSFET)
Check datasheets for exact voltage/current ratings before substitution.

Features

The FDN302P is an N-channel MOSFET with the following key features:
- Voltage Rating: 20V (Drain-to-Source, VDS)
- Current Rating: 3.3A (Continuous Drain Current, ID)
- Low On-Resistance (RDS(on)): 50mΩ (at VGS = 4.5V)
- Gate Threshold Voltage (VGS(th)): 0.4V–1V
- Fast Switching: Optimized for high-speed applications
- Small Package: SOT-23 (Space-saving SMD design)
- Logic-Level Compatible: Fully enhanced at VGS = 2.5V
- Low Power Loss: Efficient for battery-operated devices
Ideal for load switching, power management, and DC-DC conversion in portable electronics.

Manufacturer

The FDN302P is a P-channel MOSFET manufactured by ON Semiconductor, a leading global supplier of semiconductor-based solutions.
ON Semiconductor (now known as onsemi) is a Fortune 500 company specializing in power management, analog, and sensor technologies. It serves industries like automotive, industrial, and consumer electronics, known for energy-efficient innovations.
The FDN302P is part of their small-signal MOSFET lineup, designed for low-voltage applications.

Application

The FDN302P is a P-channel MOSFET commonly used in:
1. Power Management – Switching and load control in portable devices.
2. Battery Protection – Reverse polarity and overcurrent protection.
3. DC-DC Converters – Efficient power conversion in low-voltage circuits.
4. Signal Switching – Analog/digital signal routing in consumer electronics.
5. Motor Control – Small motor drivers in robotics and appliances.
Its low on-resistance (RDS(on)) and compact SOT-23 package make it ideal for space-constrained, low-power applications.

Package

The FDN302P is a P-channel MOSFET available in a SOT-23 surface-mount package. This compact 3-pin package is widely used for low-power applications, offering small size and good thermal performance. Key dimensions are approximately 2.9mm x 1.3mm x 0.95mm. Suitable for space-constrained designs.

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