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FDN358P
+BOMSMALL SIGNAL FIELD-EFFECT TRANSI
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Nhà sản xuấtCông ty bán dẫn Fairchild
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Ông. Phần #FDN358P
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Bảng dữ liệu FDN358P DataSheet
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Gói SSOT-3
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Có sẵn4188
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package | Bulk |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 1.5A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 125mOhm @ 1.5A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 5.6 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 182 pF @ 15 V |
| PowerDissipation(Max) | 500mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SuperSOT-3 |
Tổng quan
Description
The course "Introduction to FDN358P" likely serves as an introductory exploration into its subject area, which could involve advanced or niche topics in a discipline like finance, data networks, or pharmaceuticals, depending on the institution's catalog. The course typically aims to equip students with foundational knowledge and skills relevant to its focus, preparing them for more advanced study or professional application.
Key topics might include fundamental theories, industry practices, and the latest technological or methodological advancements relevant to the course's theme. The course could involve lectures, hands-on projects, and assessments designed to evaluate both theoretical understanding and practical skills.
The target audience for FDN358P probably includes undergraduate or graduate students with prerequisites in related subjects, or professionals seeking to expand their expertise. Always refer to the institution's course catalog for specific details about FDN358P.
Equivalent
Features
1. N-Channel MOSFET: Allows current to flow when a positive voltage is applied to the gate terminal relative to the source terminal.
2. Low On-Resistance: Offers minimal resistance during operation, enhancing efficiency and power handling.
3. Small Form Factor: Usually available in a compact package, making it suitable for space-constrained applications.
4. Fast Switching Speed: Capable of rapid on/off cycling, which is ideal for high-frequency applications.
5. High Input Impedance: Ensures minimal loading on preceding circuits, preserving signal integrity.
6. Thermal Performance: Designed to handle significant thermal dissipation, providing reliability in high-power scenarios.
7. Voltage and Current Ratings: Typically features specific maximum voltage and current capabilities, which should be verified for your specific model to ensure it meets your application needs.
These features make the FDN358P suitable for power management, switching, and amplification in electronic devices. Always refer to the manufacturer's datasheet for detailed specifications and guidelines.
Pinout
1. Gate (G): This pin is used to control the MOSFET's switching. Applying a voltage to the gate allows current to flow between the source and drain.
2. Source (S): In a P-channel MOSFET, the source is usually connected to the positive voltage supply. Current flows out of the source when the MOSFET is in the "on" state.
3. Drain (D): This is where the current flows into the MOSFET when it is conducting. The drain is connected to the load that you want to control.
The FDN358P is typically used in low-power, low-voltage applications due to its compact size and efficiency.
Manufacturer
Application
1. Automotive Components: Used for lenses, light covers, and interior parts due to its durability and transparency.
2. Consumer Electronics: Ideal for housings and components requiring precision and heat resistance.
3. Medical Devices: Suitable for devices needing sterilization and biocompatibility.
4. Optical Lenses: Utilized in eyewear and optical devices for its clarity and impact resistance.
5. Appliances: Used in parts that require strength and heat resistance.
FDN358P is valued for its balance of strength, clarity, and processability.