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FDN359BN
+BOMMOSFET N-CH 30V 2.7A SUPERSOT3
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Nhà sản xuấtonsemi
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Ông. Phần #FDN359BN
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Bảng dữ liệu FDN359BN DataSheet
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Gói SOT-3
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Có sẵn3109
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 2.7A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 46mOhm @ 2.7A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 7 nC @ 5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 650 pF @ 15 V |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
Tổng quan
Description
FDN359BN appears to be a course code, potentially from a specific curriculum or educational institution, but without additional context, it's difficult to provide precise details about this particular course. Generally, course codes like FDN359BN are used in academic settings to identify specific classes, often indicating the subject area, level, and sequence.
If "FDN" stands for a particular department or field, such as Foundation courses, it might focus on introductory or fundamental concepts within that domain. The numbers usually signify the course level, with "359" potentially indicating an advanced or specialized topic within the foundation area. "BN" might be a further identifier, such as a section or specific curriculum path.
To get a detailed understanding of FDN359BN, you would typically refer to the institution's course catalog or website, which would provide the course title, description, prerequisites, learning objectives, and other essential details.
If "FDN" stands for a particular department or field, such as Foundation courses, it might focus on introductory or fundamental concepts within that domain. The numbers usually signify the course level, with "359" potentially indicating an advanced or specialized topic within the foundation area. "BN" might be a further identifier, such as a section or specific curriculum path.
To get a detailed understanding of FDN359BN, you would typically refer to the institution's course catalog or website, which would provide the course title, description, prerequisites, learning objectives, and other essential details.
Equivalent
The FDN359BN is a MOSFET typically used for switching applications. Equivalent products that offer similar functionality include:
1. NXP's PMV16UN
2. ON Semiconductor's MGSF1N02LT1G
3. Vishay's SI2302CDS
4. Rohm's RQ1E060GN
When selecting an equivalent, ensure that the key specifications like voltage, current rating, and package type match your requirements. Always consult the datasheets for precise compatibility.
1. NXP's PMV16UN
2. ON Semiconductor's MGSF1N02LT1G
3. Vishay's SI2302CDS
4. Rohm's RQ1E060GN
When selecting an equivalent, ensure that the key specifications like voltage, current rating, and package type match your requirements. Always consult the datasheets for precise compatibility.
Features
The FDN359BN is a specific model of N-channel MOSFET transistor. It is designed for switching and amplification purposes in electronic circuits. Here are its key features:
1. Type: N-channel MOSFET.
2. Voltage Rating: Generally has a drain-source voltage (V_DS) of around 30V.
3. Current Rating: Can handle a drain current (I_D) of approximately 1.5A to 2A.
4. On-Resistance: Typically features a low on-resistance (R_DS(on)), ensuring efficient operation with minimal energy loss.
5. Gate Threshold Voltage: Often requires a gate-source voltage (V_GS) in the range of 1.5V to 3V for activation.
6. Package: Commonly available in compact packages like SOT-23, suitable for space-constrained applications.
7. Switching Speed: Known for fast switching speeds, making it ideal for high-frequency applications.
8. Thermal Performance: Includes features for efficient heat dissipation.
9. Applications: Used in power management, DC-DC converters, load switching, and other electronic controls.
Please refer to the specific datasheet for the most accurate and detailed specifications.
1. Type: N-channel MOSFET.
2. Voltage Rating: Generally has a drain-source voltage (V_DS) of around 30V.
3. Current Rating: Can handle a drain current (I_D) of approximately 1.5A to 2A.
4. On-Resistance: Typically features a low on-resistance (R_DS(on)), ensuring efficient operation with minimal energy loss.
5. Gate Threshold Voltage: Often requires a gate-source voltage (V_GS) in the range of 1.5V to 3V for activation.
6. Package: Commonly available in compact packages like SOT-23, suitable for space-constrained applications.
7. Switching Speed: Known for fast switching speeds, making it ideal for high-frequency applications.
8. Thermal Performance: Includes features for efficient heat dissipation.
9. Applications: Used in power management, DC-DC converters, load switching, and other electronic controls.
Please refer to the specific datasheet for the most accurate and detailed specifications.
Pinout
The FDN359BN is an N-channel MOSFET commonly used for switching applications. It is packaged in a surface-mount SOT-23 package, which typically has three pins. The pin count and functions for the FDN359BN are as follows:
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the MOSFET can be turned on or off.
2. Source (S): This is the source terminal of the MOSFET. It is the terminal through which the current enters the MOSFET when it is turned on.
3. Drain (D): This is the drain terminal of the MOSFET. It is the terminal through which the current exits the MOSFET when it is turned on.
The FDN359BN is designed for low voltage applications and provides efficient switching with its low on-resistance. It's commonly used in applications where space is limited, such as in mobile and portable devices.
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the MOSFET can be turned on or off.
2. Source (S): This is the source terminal of the MOSFET. It is the terminal through which the current enters the MOSFET when it is turned on.
3. Drain (D): This is the drain terminal of the MOSFET. It is the terminal through which the current exits the MOSFET when it is turned on.
The FDN359BN is designed for low voltage applications and provides efficient switching with its low on-resistance. It's commonly used in applications where space is limited, such as in mobile and portable devices.
Manufacturer
The FDN359BN is manufactured by ON Semiconductor, a company that specializes in semiconductors. ON Semiconductor, now known as onsemi, is a leading supplier of semiconductor-based solutions offering a comprehensive portfolio of energy-efficient power and signal management, logic, standard, and custom devices. Their products are utilized in a variety of sectors, including automotive, communications, computing, consumer electronics, industrial, medical, and aerospace defense.
Application
FDN359BN is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in various electronic applications. Its application areas include:
1. Power Management: Used in DC-DC converters and voltage regulation circuits to enhance efficiency.
2. Consumer Electronics: Employed in devices like laptops and smartphones for switching and power control.
3. Automotive Systems: Applicable in controlling circuits in vehicles, such as lighting and power steering.
4. Industrial Equipment: Used in motor drives and industrial automation systems for efficient power switching.
5. Telecommunications: Utilized in RF amplifiers and signal processing units.
Overall, FDN359BN is valued for its efficiency and reliability in electronic switching applications.
1. Power Management: Used in DC-DC converters and voltage regulation circuits to enhance efficiency.
2. Consumer Electronics: Employed in devices like laptops and smartphones for switching and power control.
3. Automotive Systems: Applicable in controlling circuits in vehicles, such as lighting and power steering.
4. Industrial Equipment: Used in motor drives and industrial automation systems for efficient power switching.
5. Telecommunications: Utilized in RF amplifiers and signal processing units.
Overall, FDN359BN is valued for its efficiency and reliability in electronic switching applications.
Package
The FDN359BN is a MOSFET transistor, and its package type is a SuperSOT-6. This package is a small, surface-mount format that is often used for low-power applications.
