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FDP150N10
+BOMMOSFET N-CH 100V 57A TO220-3
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Nhà sản xuấtonsemi
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Ông. Phần #FDP150N10
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | onsemi |
| Package / Case | Tube |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 57A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 15mOhm @ 49A, 10V |
| Vgs(th)(Max) @ Id | 4.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 69 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 4760 pF @ 25 V |
| Power Dissipation (Max) | 110W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
Tổng quan
Description
FDP150N10 is an N-channel enhancement‑mode power MOSFET used for switching power electronics. Typical purpose: high‑current DC‑DC converters, motor drivers, and automotive/industrial power stages.
Top-line, general specs (varies by package/revision):
- VDS: about 100 V
- ID: ~150 A continuous (depends on heat sinking and package)
- RDS(on): low milliohms range at VGS ≈ 10 V (values depend on package and drive)
- Gate threshold: ~2–4 V
- Packages: multiple options (TO‑220, D²PAK, etc.) with variant‑specific pinouts and thermal data
Key notes:
- Drive with appropriate VGS; many applications use ~10 V for best conduction (some variants have lower drive).
- Check datasheet for exact RDS(on), Qgs/Qgd, total gate charge, and thermal impedance for your package.
- Verify pinout and safety margins (VGSmax, avalanche energy, etc.) from the specific FDP150N10 datasheet from ON Semiconductor/Fairchild or a distributor.
Top-line, general specs (varies by package/revision):
- VDS: about 100 V
- ID: ~150 A continuous (depends on heat sinking and package)
- RDS(on): low milliohms range at VGS ≈ 10 V (values depend on package and drive)
- Gate threshold: ~2–4 V
- Packages: multiple options (TO‑220, D²PAK, etc.) with variant‑specific pinouts and thermal data
Key notes:
- Drive with appropriate VGS; many applications use ~10 V for best conduction (some variants have lower drive).
- Check datasheet for exact RDS(on), Qgs/Qgd, total gate charge, and thermal impedance for your package.
- Verify pinout and safety margins (VGSmax, avalanche energy, etc.) from the specific FDP150N10 datasheet from ON Semiconductor/Fairchild or a distributor.
Equivalent
FDP150N10 is a Fairchild N-channel power MOSFET. Exact cross‑references depend on package and key specs (Vds, Id, Rds(on)). Please provide: package (TO-220, DPAK, etc.), Vds rating, Id rating, Rds(on), and gate drive. With that, I can give direct equivalents from Infineon, ST, Onsemi, Vishay (e.g., IR/STP/FQ series).
Features
FDP150N10 is an N‑channel enhancement MOSFET. Key features typically include:
- VDS = 150 V; ID = 10 A (continuous)
- Low RDS(on) (typical ~0.15–0.30 Ω at VGS = 10 V; check datasheet for exact value)
- Threshold ≈ 2–4 V
- Suitable for fast-switching applications with moderate gate charge
- Avalanche-rated with rugged body diode
- Packages: TO-220AB and surface-mount options (DPAK/TO-263), RoHS-compliant, Pb-free
- Applications: high-voltage switching, DC-DC converters, motor drivers, synchronous rectification
Note: exact electrical figures can vary by lot and package; please consult the specific datasheet for your device.
- VDS = 150 V; ID = 10 A (continuous)
- Low RDS(on) (typical ~0.15–0.30 Ω at VGS = 10 V; check datasheet for exact value)
- Threshold ≈ 2–4 V
- Suitable for fast-switching applications with moderate gate charge
- Avalanche-rated with rugged body diode
- Packages: TO-220AB and surface-mount options (DPAK/TO-263), RoHS-compliant, Pb-free
- Applications: high-voltage switching, DC-DC converters, motor drivers, synchronous rectification
Note: exact electrical figures can vary by lot and package; please consult the specific datasheet for your device.
Pinout
- Pin count: 3 pins (Gate, Drain, Source); plus a drain tab in many packages.
- Function: N-channel enhancement-mode power MOSFET (high-voltage switch), typically 150 V / ~10 A, used as a switching device in power circuits. Gate controls conduction between Drain and Source; Drain often tied to the tab.
- Function: N-channel enhancement-mode power MOSFET (high-voltage switch), typically 150 V / ~10 A, used as a switching device in power circuits. Gate controls conduction between Drain and Source; Drain often tied to the tab.
Manufacturer
Manufacturer: Fairchild Semiconductor (now part of ON Semiconductor).
Company type: A global semiconductor company that designs, manufactures, and sells power MOSFETs, diodes, and other discrete and analog ICs.
Company type: A global semiconductor company that designs, manufactures, and sells power MOSFETs, diodes, and other discrete and analog ICs.
Application
- High‑voltage switching in offline SMPS (flyback, buck/boost)
- DC‑DC converters and point‑of‑load regulators
- LED constant‑current driver circuits
- Motor/actuator drive circuits
- Automotive and industrial power electronics (inverters, battery chargers)
- Solar power systems (PV inverters, charge controllers) and UPS applications
Note: Always consult the datasheet for Vds, Id, Rds(on), and gate-drive requirements.
- DC‑DC converters and point‑of‑load regulators
- LED constant‑current driver circuits
- Motor/actuator drive circuits
- Automotive and industrial power electronics (inverters, battery chargers)
- Solar power systems (PV inverters, charge controllers) and UPS applications
Note: Always consult the datasheet for Vds, Id, Rds(on), and gate-drive requirements.
Package
TO-220AB (through-hole) package.
