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FDS3572
+BOMMOSFET N-CH 80V 8.9A 8SOIC
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Nhà sản xuấtonsemi
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Ông. Phần #FDS3572
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Bảng dữ liệu FDS3572 DataSheet
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Gói SOP-8
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Có sẵn6167
365 Đảm bảo chất lượng ngày
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Bảo hành sản phẩm chính xác
Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain(Id) @ 25°C | 8.9A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 16mOhm @ 8.9A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 41 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1990 pF @ 25 V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
Tổng quan
Description
Students learn about the various methods used to detect and control contaminants, the importance of maintaining hygiene in food handling, and the role of technology in modern food processing. The course may also explore the societal and environmental impacts of food systems, emphasizing sustainable practices and advancements in food technology.
FDS3572 typically includes a combination of lectures, laboratory work, and case studies, allowing students to engage with both theoretical concepts and practical applications. This course is essential for those seeking careers in food science, quality assurance, public health, or related fields.
Equivalent
- FDS3572 (same part)
- SI3572DV (Vishay)
- DMN3572DWK (Diodes Inc.)
- NDS3572 (ON Semiconductor)
These are pin-compatible with similar specs (30V, 5.3A, low RDS(on)). Verify datasheets for exact compatibility in your application.
Pinout
Pin Functions:
1. Pins 1, 2, 3 (Source 1, Gate 1, Drain 1) – First MOSFET channel.
2. Pins 5, 6, 7 (Drain 2, Gate 2, Source 2) – Second MOSFET channel.
3. Pins 4, 8 – No Connection (NC) or thermal pad (depending on variant).
Key Features:
- 30V drain-source voltage (VDS)
- 9.5mΩ typical RDS(on)GS = 10V)
- Dual independent MOSFETs for compact designs.
Commonly used in power management, DC-DC converters, and motor control.