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FDS6930B
+BOMMOSFET 2N-CH 30V 5.5A 8SOIC
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Nhà sản xuấtonsemi
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Ông. Phần #FDS6930B
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Bảng dữ liệu FDS6930B DataSheet
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Gói SOIC-8
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Có sẵn16996
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | onsemi,Rochester Electronics, LLC |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 30V |
| Current-ContinuousDrain(Id)@25°C | 5.5A |
| RdsOn(Max)@IdVgs | 38mOhm @ 5.5A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 3.8nC @ 5V |
| InputCapacitance(Ciss)(Max)@Vds | 412pF @ 15V |
| Power-Max | 900mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Tổng quan
Description
The course may cover fundamental and advanced topics, methodologies, and applications relevant to the subject area. Students can expect to engage in critical analysis, hands-on projects, and possibly collaborate on research initiatives. The curriculum might include lectures, lab work, and seminars designed to deepen understanding and foster skills pertinent to the discipline.
Key areas of focus could include the latest industry practices, technological advancements, and theoretical frameworks. Assessment methods may comprise exams, project work, presentations, and research papers, aimed at evaluating students’ grasp of the material and ability to apply their knowledge practically. Students interested in enrolling should check the specific institution's course catalog for precise details about prerequisites, instructors, and schedules.
Equivalent
1. AO4616 by Alpha & Omega Semiconductor
2. SI4936ADY by Vishay
3. IRF7319 by Infineon Technologies
These equivalents offer similar voltage and current ratings, packaging, and performance characteristics. Always verify the specifications to ensure compatibility with your application.
Features
1. Low On-Resistance: The FDS6930B exhibits low R_DS(on), which reduces power loss and enhances efficiency in power conversion applications.
2. High-Speed Switching: It supports high-speed operation, beneficial for applications requiring quick switching times.
3. Dual N-Channel Configuration: This allows for more versatile circuit designs, as it can handle two separate loads or be used in applications like synchronous rectification.
4. Compact Package: Available in a small surface-mount package, it is ideal for space-constrained designs.
5. Thermal Performance: Efficient heat dissipation supports reliable operation over a range of temperatures.
6. Robust Design: Features like avalanche ruggedness and ESD protection enhance the device's durability and reliability.
These features make the FDS6930B suitable for a variety of electronics applications, particularly in areas demanding efficient power handling and compact design.
Pinout
1. Pin 1 (Source1): Source terminal for the first MOSFET.
2. Pin 2 (Gate1): Gate terminal for the first MOSFET.
3. Pin 3 (Source1): Source terminal for the first MOSFET (common with Pin 1).
4. Pin 4 (Drain1): Drain terminal for the first MOSFET.
5. Pin 5 (Drain2): Drain terminal for the second MOSFET.
6. Pin 6 (Source2): Source terminal for the second MOSFET.
7. Pin 7 (Gate2): Gate terminal for the second MOSFET.
8. Pin 8 (Source2): Source terminal for the second MOSFET (common with Pin 6).
The FDS6930B is commonly used for power management applications, offering low on-resistance and efficient switching characteristics.