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FDS86140
+BOMMOSFET N-CH 100V 11.2A 8SOIC
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Nhà sản xuấtonsemi
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Ông. Phần #FDS86140
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Bảng dữ liệu FDS86140 DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | onsemi,Rochester Electronics, LLC |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 11.2A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 9.8mOhm @ 11.2A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 41 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 2580 pF @ 50 V |
| Power Dissipation (Max) | 2.5W (Ta), 5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
Tổng quan
Description
Key features of the FDS86140 include low on-resistance, which enhances efficiency by reducing power loss, and fast switching capabilities, which make it suitable for high-frequency applications. It operates at a maximum drain-source voltage (V_DS) of around 25V and can handle substantial current levels, making it ideal for applications like DC-DC converters, motor drives, and power management in portable devices.
The FDS86140 also benefits from Fairchild's PowerTrench® technology, which optimizes the transistor's structure for reduced switching loss and improved overall performance in power-sensitive applications. This makes it a reliable choice for designers looking to maximize efficiency and performance in compact, high-frequency circuits.
Equivalent
1. Vishay SI7625DN
2. Infineon IPD088N06N3 G
3. ON Semiconductor NTD5867NL
4. STMicroelectronics STP36NF06
These alternatives offer similar specifications, such as breakdown voltage and current handling, but it's important to verify the exact specifications and pin configurations to ensure compatibility with your application.
Features
1. N-Channel MOSFET: The FDS86140 is an N-channel MOSFET, which means it conducts when a positive voltage is applied to the gate relative to the source.
2. Low On-Resistance: It typically features low on-resistance, which reduces power loss and enhances efficiency in power conversion applications.
3. High Current Capacity: This MOSFET can handle substantial current levels, making it suitable for high-power applications.
4. Fast Switching Speed: The device supports rapid switching, which is beneficial for high-frequency applications and reduces switching losses.
5. SO-8 Package: The FDS86140 is commonly available in an SO-8 surface-mount package, facilitating compact and efficient PCB designs.
6. Thermal Efficiency: Good thermal performance ensures reliability and longevity in demanding applications.
These features make the FDS86140 suitable for use in DC-DC converters, power supplies, and various other power management systems.
Pinout
1. Pins 1, 2, 3: Source (S) - These are connected together internally and serve as the source terminal for the MOSFET.
2. Pin 4: Gate (G) - This pin is used to control the MOSFET by applying a voltage to turn the device on or off.
3. Pins 5, 6, 7, 8: Drain (D) - These are connected together internally and serve as the drain terminal for the MOSFET.
This MOSFET is used in power management applications, featuring low on-resistance and fast switching characteristics, making it suitable for efficient power conversion and management in electronic devices.
Manufacturer
Application
1. DC-DC Converters: Utilized in voltage regulation and conversion in power supplies and battery-operated devices.
2. Motor Control: Employed in driving motors in various applications, including automotive systems and industrial machinery.
3. Load Switching: Used in switching applications for controlling power delivery to different loads.
4. Lighting Systems: Integrated into LED drivers and other lighting control circuits.
5. Inverters: Part of inverter systems for renewable energy solutions like solar inverters.
The FDS86140's low gate charge and fast switching capabilities make it suitable for these high-efficiency applications.