Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | N and P-Channel |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 30V |
| Current-ContinuousDrain(Id)@25°C | 8.6A, 7.3A |
| RdsOn(Max)@IdVgs | 17mOhm @ 8.6A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 24nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 1205pF @ 15V |
| Power-Max | 900mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Tổng quan
Equivalent
The FDS8858CZ is a dual N-channel MOSFET. Equivalent alternatives include:
- FDS8858NZ (similar specs, different package)
- SI7852DP-T1-GE3 (Vishay)
- DMN2019LSN-7 (Diodes Inc.)
- CSD17313Q2 (Texas Instruments)
Check datasheets for exact compatibility in voltage (30V), current (6.5A), and RDS(on) (25mΩ). Confirm pinout and package (SOIC-8) matches your design.
- FDS8858NZ (similar specs, different package)
- SI7852DP-T1-GE3 (Vishay)
- DMN2019LSN-7 (Diodes Inc.)
- CSD17313Q2 (Texas Instruments)
Check datasheets for exact compatibility in voltage (30V), current (6.5A), and RDS(on) (25mΩ). Confirm pinout and package (SOIC-8) matches your design.
Features
The FDS8858CZ is a dual N-channel MOSFET with the following key features:
- Voltage Rating: 30V (drain-to-source, VDSS).
- Current Rating: 8.7A continuous (ID) per channel.
- Low On-Resistance: 13mΩ (typical) at VGS = 10V.
- Fast Switching: Optimized for high-speed applications.
- Logic-Level Gate Drive: Fully enhanced at VGS = 4.5V.
- Low Gate Charge (QG): Improves efficiency in switching circuits.
- Power Dissipation: 2W per channel (TA = 25°C).
- Package: SOIC-8 (compact and space-saving).
- Applications: Power management, DC-DC converters, motor control, and load switching.
This MOSFET is designed for high efficiency and reliability in low-voltage systems.
- Voltage Rating: 30V (drain-to-source, VDSS).
- Current Rating: 8.7A continuous (ID) per channel.
- Low On-Resistance: 13mΩ (typical) at VGS = 10V.
- Fast Switching: Optimized for high-speed applications.
- Logic-Level Gate Drive: Fully enhanced at VGS = 4.5V.
- Low Gate Charge (QG): Improves efficiency in switching circuits.
- Power Dissipation: 2W per channel (TA = 25°C).
- Package: SOIC-8 (compact and space-saving).
- Applications: Power management, DC-DC converters, motor control, and load switching.
This MOSFET is designed for high efficiency and reliability in low-voltage systems.
Application
The FDS8858CZ is a dual N-channel MOSFET commonly used in:
1. Power Management – DC-DC converters, voltage regulators.
2. Motor Control – H-bridge circuits, brushed motor drives.
3. Load Switching – Battery protection, power distribution.
4. Portable Devices – Smartphones, tablets (efficient power switching).
5. Automotive Systems – LED drivers, infotainment power circuits.
It offers low on-resistance (RDS(on)) and high efficiency, making it suitable for compact, high-performance applications.
1. Power Management – DC-DC converters, voltage regulators.
2. Motor Control – H-bridge circuits, brushed motor drives.
3. Load Switching – Battery protection, power distribution.
4. Portable Devices – Smartphones, tablets (efficient power switching).
5. Automotive Systems – LED drivers, infotainment power circuits.
It offers low on-resistance (RDS(on)) and high efficiency, making it suitable for compact, high-performance applications.
Package
The FDS8858CZ is a dual N-channel MOSFET in a SO-8 (8-pin Small Outline) package. It features a compact, surface-mount design for high-density PCB applications. The SO-8 package is industry-standard, offering good thermal performance and ease of assembly. Key specs include 30V drain-source voltage and 6.5A continuous drain current. Suitable for power management in portable electronics.
