FP35R12KT4

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FP35R12KT4

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  • Nhà sản xuấtCông nghệ Infineon

  • Ông. Phần #FP35R12KT4

  • Bảng dữ liệu FP35R12KT4 DataSheet

  • Có sẵn4907

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Thông số kỹ thuật

thuộc tính Giá trị
MountingStyle Screw Mount
Package/Case Econo 2
Technology Si
MinimumOperatingTemperature - 40 C
MaximumOperatingTemperature + 150 C
Packaging Tray
Brand Infineon Technologies
ProductType IGBT Modules
Subcategory IGBTs
Configuration Hex
Series Trenchstop IGBT4 - T4
Height 17 mm
Length 107.5 mm
Product IGBT Modules
FactoryPackQuantity:FactoryPackQuantity 10
Width 45 mm
Part#Aliases SP000372918 FP35R12KT4BOSA1
UnitWeight 1.375685 oz
ShippingRestrictions Mouser does not presently sell this product in your region.
Collector-EmitterVoltageVCEOMax 1.2 kV
ContinuousCollectorCurrentat25C 35 A
MaximumGateEmitterVoltage 20 V
Tradename TRENCHSTOP EconoPIM

Tổng quan

Description

The FP35R12KT4 is a type of IGBT (Insulated Gate Bipolar Transistor) module designed for high-efficiency power switching applications. It belongs to the family of power semiconductor devices, commonly used in inverter systems, motor drives, and power supplies.
Key specifications include a voltage rating of 1200V and a current rating of 35A, making it suitable for medium to high-power applications. The module features low conduction and switching losses, contributing to better thermal performance and overall efficiency.
The construction typically includes a compact footprint, facilitating easy integration into various systems. The FP35R12KT4 is designed to handle high-frequency operations, which is beneficial for applications such as renewable energy inverters and industrial automation.
In summary, the FP35R12KT4 is an essential component in modern power electronics, enabling efficient control and conversion of electrical energy in a wide range of applications.

Equivalent

The FP35R12KT4 is a module from Infineon, primarily used in power electronics applications. Equivalent products include the IGBT modules from other manufacturers like the Mitsubishi CM100DY-12NF, the Semikron SKM 100GB123D, and the ON Semiconductor FGA100N12. Always consult the datasheets for specifications and performance characteristics to ensure compatibility in your application.

Features

The FP35R12KT4 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed for various power applications. Key features include:
1. Voltage Rating: It has a collector-emitter voltage (Vce) rating of 1200V, making it suitable for medium voltage applications.
2. Current Rating: This module supports a continuous collector current of 35A, providing robust power handling capabilities.
3. Low Switching Losses: The FP35R12KT4 is designed for efficient switching, which reduces energy losses during operation.
4. Fast Switching Speed: It offers enhanced dynamic performance, suitable for high-frequency applications.
5. Thermal Performance: The module has good thermal characteristics, allowing for reliable operation even at elevated temperatures.
6. Integrated Design: It features a compact and modular design, facilitating easy integration into various systems.
7. Short-Circuit Capability: The device supports short-circuit withstand time, enhancing its durability in demanding applications.
Overall, the FP35R12KT4 is ideal for inverters, converters, and motor control applications in industrial settings.

Pinout

The FP35R12KT4 is an IGBT module manufactured by Infineon Technologies. It typically features a pin count of 6. The pins are used for the following functions:
1. Collector (C): Connects to the load and carries the main current.
2. Emitter (E): Connects to the ground or negative side of the circuit.
3. Gate (G): Controls the turn-on and turn-off of the IGBT.
The specific layout and function can vary slightly based on the module version, so referring to the datasheet for the FP35R12KT4 is recommended for precise pin configuration and additional details.

Manufacturer

The FP35R12KT4 is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer headquartered in Germany. Infineon specializes in designing and producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. The company serves various industries, including automotive, industrial, and consumer electronics, focusing on energy efficiency and performance.
Infineon is known for its innovations in power management and automation technologies, contributing significantly to advancements in electric vehicles, renewable energy applications, and smart manufacturing. Established in 1999 as a spin-off from Siemens, Infineon has grown to become a key player in the semiconductor market, emphasizing sustainability and digitalization in its product offerings.

Application

The FP35R12KT4 is a high-performance IGBT (Insulated Gate Bipolar Transistor) suitable for various applications including:
1. Industrial Drives: Used in variable frequency drives (VFDs) for motors.
2. Renewable Energy: Employed in solar inverters and wind turbine converters.
3. Power Supplies: Utilized in uninterruptible power supplies (UPS) and switched-mode power supplies (SMPS).
4. Transportation: Applied in electric and hybrid vehicle motor drives.
5. Heating: Used in induction heating systems.
Its efficient switching capabilities make it ideal for high-power applications where reliability and thermal performance are crucial.

Package

The FP35R12KT4 is typically packaged in a DPAK (TO-252) package type. This package is designed for surface mounting and is used for power semiconductor devices, providing efficient thermal and electrical performance.

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