Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tube |
| Series | QFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain(Id) @ 25°C | 12.6A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 750mOhm @ 6.3A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 88 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 3500 pF @ 25 V |
| Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3PN |
Tổng quan
Description
The FQA13N80 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. It is part of the Fairchild Semiconductor's (now part of ON Semiconductor) range of power MOSFETs. The "13N80" in its name indicates its key characteristics: it can handle a current (I_D) of up to 13 amperes and a drain-to-source voltage (V_DS) of 800 volts, making it suitable for demanding environments.
The FQA13N80 features a low on-resistance (R_DS(on)), which ensures efficient performance with minimal power loss, and a high-speed switching capability, making it ideal for use in power supplies, motor controllers, and other high-voltage applications. The device is housed in a TO-3P package, which provides effective heat dissipation and allows for the handling of higher power levels.
Its rugged design and high robustness against voltage spikes make it reliable for both industrial and consumer electronics. The FQA13N80 is used where efficiency and high power handling are critical, providing a balance between performance and cost.
The FQA13N80 features a low on-resistance (R_DS(on)), which ensures efficient performance with minimal power loss, and a high-speed switching capability, making it ideal for use in power supplies, motor controllers, and other high-voltage applications. The device is housed in a TO-3P package, which provides effective heat dissipation and allows for the handling of higher power levels.
Its rugged design and high robustness against voltage spikes make it reliable for both industrial and consumer electronics. The FQA13N80 is used where efficiency and high power handling are critical, providing a balance between performance and cost.
Equivalent
The FQA13N80 is an N-channel MOSFET typically used in power applications. Equivalent products include:
1. IRFP240 by International Rectifier
2. STP9NK90Z from STMicroelectronics
3. NTE2973 by NTE Electronics
4. APT8011BN from Microsemi (now part of Microchip Technology)
Always verify the specifications like voltage, current rating, and package type to ensure compatibility.
1. IRFP240 by International Rectifier
2. STP9NK90Z from STMicroelectronics
3. NTE2973 by NTE Electronics
4. APT8011BN from Microsemi (now part of Microchip Technology)
Always verify the specifications like voltage, current rating, and package type to ensure compatibility.
Features
The FQA13N80 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) known for its high voltage and high current handling capabilities, making it suitable for various power applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 800V, making it suitable for high-voltage applications.
2. Current Rating: The device supports a continuous drain current (I_D) of 13A, allowing significant power handling.
3. R_DS(on): It has a low on-resistance, which reduces power loss and increases efficiency.
4. Package Type: Typically available in a TO-3P package, which offers good thermal performance and ease of mounting.
5. Thermal Performance: Designed to manage heat efficiently, crucial for high power applications.
6. Applications: Commonly used in power supplies, motor control, lighting, and other high-voltage systems.
7. Enhancement Mode: It operates in enhancement mode, requiring a positive gate-source voltage to turn on.
These features combine to make the FQA13N80 a versatile choice for designers needing robust and efficient high-voltage MOSFETs.
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 800V, making it suitable for high-voltage applications.
2. Current Rating: The device supports a continuous drain current (I_D) of 13A, allowing significant power handling.
3. R_DS(on): It has a low on-resistance, which reduces power loss and increases efficiency.
4. Package Type: Typically available in a TO-3P package, which offers good thermal performance and ease of mounting.
5. Thermal Performance: Designed to manage heat efficiently, crucial for high power applications.
6. Applications: Commonly used in power supplies, motor control, lighting, and other high-voltage systems.
7. Enhancement Mode: It operates in enhancement mode, requiring a positive gate-source voltage to turn on.
These features combine to make the FQA13N80 a versatile choice for designers needing robust and efficient high-voltage MOSFETs.
Pinout
The FQA13N80 is an N-channel MOSFET produced by Fairchild Semiconductor. It has a total of three pins. The pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate determines whether the MOSFET is in an on or off state.
2. Drain (D): The drain is the terminal through which the main current flows from the load when the MOSFET is on.
3. Source (S): The source is the terminal through which the main current leaves the MOSFET.
The FQA13N80 is designed for high-voltage applications and can handle a drain-source voltage (V_DS) of up to 800V. It is typically used in power supply applications, motor control, and other high-power switching applications.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate determines whether the MOSFET is in an on or off state.
2. Drain (D): The drain is the terminal through which the main current flows from the load when the MOSFET is on.
3. Source (S): The source is the terminal through which the main current leaves the MOSFET.
The FQA13N80 is designed for high-voltage applications and can handle a drain-source voltage (V_DS) of up to 800V. It is typically used in power supply applications, motor control, and other high-power switching applications.
Manufacturer
The FQA13N80 is manufactured by ON Semiconductor, a company known for producing a wide range of semiconductor components. ON Semiconductor, now known as onsemi, is a leading provider of power and signal management, logic, discrete, and custom devices. These components are crucial for applications in various sectors, including automotive, communications, computing, consumer electronics, industrial, medical, and military/aerospace. Onsemi focuses on energy-efficient innovations, aiming to reduce global energy use and promote sustainable practices. The company is headquartered in Phoenix, Arizona, and operates globally, supplying products that support advancements in technology and energy efficiency.
Application
The FQA13N80 is an N-channel MOSFET with a high voltage rating and fast switching capabilities. It is commonly used in applications such as:
1. Power Supplies: Utilized in the primary side of switching power supplies due to its high efficiency and fast switching speed.
2. Motor Control: Employed in motor drivers and controllers for industrial and consumer applications.
3. Lighting: Used in electronic ballasts and LED drivers for efficient power regulation.
4. Inverters: Applicable in DC-AC inverters for renewable energy systems and uninterruptible power supplies (UPS).
5. Audio Amplifiers: Serves in Class D audio amplifiers for efficient power handling.
These applications benefit from the MOSFET's high voltage tolerance, efficiency, and reliability.
1. Power Supplies: Utilized in the primary side of switching power supplies due to its high efficiency and fast switching speed.
2. Motor Control: Employed in motor drivers and controllers for industrial and consumer applications.
3. Lighting: Used in electronic ballasts and LED drivers for efficient power regulation.
4. Inverters: Applicable in DC-AC inverters for renewable energy systems and uninterruptible power supplies (UPS).
5. Audio Amplifiers: Serves in Class D audio amplifiers for efficient power handling.
These applications benefit from the MOSFET's high voltage tolerance, efficiency, and reliability.
Package
The FQA13N80 is typically available in a TO-3P package. This package type is commonly used for high-power applications, providing efficient heat dissipation and sturdy physical construction.
