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FQA28N50
+BOMMOSFET N-CH 500V 28.4A TO3P
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Nhà sản xuấtonsemi
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Ông. Phần #FQA28N50
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Bảng dữ liệu FQA28N50 DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | onsemi |
| Package / Case | Tube |
| Series | QFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain(Id) @ 25°C | 28.4A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 160mOhm @ 14.2A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 140 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 5600 pF @ 25 V |
| Power Dissipation (Max) | 310W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3P |
Tổng quan
Description
The FQA28N50 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power switching applications. It belongs to the family of N-channel MOSFETs and is known for its robust performance and reliability. The "FQA" prefix typically indicates a Fairchild Semiconductor component, although Fairchild has since been acquired by ON Semiconductor.
Key features of the FQA28N50 include a maximum drain-source voltage (V_DS) of 500V, a continuous drain current (I_D) of 28A, and a low on-state resistance (R_DS(on)), which ensures minimal power loss during operation. These characteristics make it suitable for high-voltage and high-current applications such as power supplies, motor drivers, and inverters.
The device is housed in a TO-3P package, which provides efficient heat dissipation, allowing the FQA28N50 to handle substantial power levels. Its design supports fast switching speeds, enhancing efficiency in power conversion systems. Overall, the FQA28N50 is a versatile component favored in industrial and consumer electronics for its performance in demanding electrical environments.
Key features of the FQA28N50 include a maximum drain-source voltage (V_DS) of 500V, a continuous drain current (I_D) of 28A, and a low on-state resistance (R_DS(on)), which ensures minimal power loss during operation. These characteristics make it suitable for high-voltage and high-current applications such as power supplies, motor drivers, and inverters.
The device is housed in a TO-3P package, which provides efficient heat dissipation, allowing the FQA28N50 to handle substantial power levels. Its design supports fast switching speeds, enhancing efficiency in power conversion systems. Overall, the FQA28N50 is a versatile component favored in industrial and consumer electronics for its performance in demanding electrical environments.
Equivalent
The FQA28N50 is a N-channel MOSFET. Equivalent products include:
1. STP28NM50 (STMicroelectronics)
2. IRFP460 (International Rectifier/Infineon)
3. FDPF42N50 (ON Semiconductor)
4. IXFH28N50 (IXYS)
These equivalents should have similar specifications, like voltage and current ratings, but always verify the datasheets for exact compatibility.
1. STP28NM50 (STMicroelectronics)
2. IRFP460 (International Rectifier/Infineon)
3. FDPF42N50 (ON Semiconductor)
4. IXFH28N50 (IXYS)
These equivalents should have similar specifications, like voltage and current ratings, but always verify the datasheets for exact compatibility.
Features
The FQA28N50 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in high-power applications. Here are its key features:
1. N-Channel MOSFET: It is an N-channel enhancement mode MOSFET, which means it requires a positive gate-source voltage to turn on.
2. Voltage Rating: The device typically has a drain-source voltage (V_DS) rating of 500V, making it suitable for high-voltage applications.
3. Current Rating: The maximum continuous drain current (I_D) is around 28A, allowing it to handle significant power.
4. R_DS(on): It typically features a low on-state resistance (R_DS(on)) of about 0.135 ohms, which contributes to higher efficiency and lower power loss.
5. Package: Often available in a TO-3P package, which provides good thermal performance and ease of mounting to a heatsink.
6. Applications: Commonly used in power supplies, motor controllers, inverters, and other applications requiring efficient power handling.
These features make the FQA28N50 suitable for various high-power electronic applications where efficiency and reliability are critical.
1. N-Channel MOSFET: It is an N-channel enhancement mode MOSFET, which means it requires a positive gate-source voltage to turn on.
2. Voltage Rating: The device typically has a drain-source voltage (V_DS) rating of 500V, making it suitable for high-voltage applications.
3. Current Rating: The maximum continuous drain current (I_D) is around 28A, allowing it to handle significant power.
4. R_DS(on): It typically features a low on-state resistance (R_DS(on)) of about 0.135 ohms, which contributes to higher efficiency and lower power loss.
5. Package: Often available in a TO-3P package, which provides good thermal performance and ease of mounting to a heatsink.
6. Applications: Commonly used in power supplies, motor controllers, inverters, and other applications requiring efficient power handling.
These features make the FQA28N50 suitable for various high-power electronic applications where efficiency and reliability are critical.
Pinout
The FQA28N50 is a power MOSFET that features a total of 3 pins. These are:
1. Gate (G): This pin is used to control the MOSFET's conduction state. By applying a voltage to this pin, you can switch the MOSFET on or off.
2. Drain (D): This pin is the main terminal for the flow of current into the device when it is turned on. It is connected to the load in most applications.
3. Source (S): This pin is the terminal through which current exits the device. It is typically connected to the ground or the negative side of the power supply in a circuit.
The FQA28N50 is designed for high power and high efficiency, often used in switching applications like power supplies, motor controllers, and other power management systems. It can handle a significant amount of current and voltage, making it suitable for demanding applications.
1. Gate (G): This pin is used to control the MOSFET's conduction state. By applying a voltage to this pin, you can switch the MOSFET on or off.
2. Drain (D): This pin is the main terminal for the flow of current into the device when it is turned on. It is connected to the load in most applications.
3. Source (S): This pin is the terminal through which current exits the device. It is typically connected to the ground or the negative side of the power supply in a circuit.
The FQA28N50 is designed for high power and high efficiency, often used in switching applications like power supplies, motor controllers, and other power management systems. It can handle a significant amount of current and voltage, making it suitable for demanding applications.
Manufacturer
The FQA28N50 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor, which is a leading supplier of semiconductor-based solutions. ON Semiconductor specializes in a wide range of products, including power management, analog, sensors, logic, timing, and discrete devices, and it serves various industries such as automotive, industrial, consumer electronics, and communications. The company focuses on providing energy-efficient and reliable semiconductor solutions to help its customers develop innovative products and improve their energy usage.
Application
The FQA28N50 is a power MOSFET designed for high-efficiency and fast-switching applications. Its principal application areas include:
1. Power Supplies: Used in switch-mode power supplies (SMPS) for efficient power conversion.
2. Motor Control: Suitable for motor drive circuits due to its high current and voltage capabilities.
3. Inverters: Commonly used in DC-AC inverters for renewable energy systems.
4. Lighting: Applied in electronic ballast for lighting systems.
5. Audio Amplifiers: Utilized in high-power audio amplifier designs for improved performance.
These applications benefit from the FQA28N50's high-speed switching, low on-resistance, and robustness.
1. Power Supplies: Used in switch-mode power supplies (SMPS) for efficient power conversion.
2. Motor Control: Suitable for motor drive circuits due to its high current and voltage capabilities.
3. Inverters: Commonly used in DC-AC inverters for renewable energy systems.
4. Lighting: Applied in electronic ballast for lighting systems.
5. Audio Amplifiers: Utilized in high-power audio amplifier designs for improved performance.
These applications benefit from the FQA28N50's high-speed switching, low on-resistance, and robustness.
Package
The FQA28N50 is a power MOSFET typically packaged in a TO-3P format. This package type is designed for high power applications, offering efficient thermal performance and reliable usage in various electronic and power supply circuits.
