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FQB1P50TM
+BOMMOSFET P-CH 500V 1.5A D2PAK
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Nhà sản xuấtonsemi
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Ông. Phần #FQB1P50TM
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Bảng dữ liệu FQB1P50TM DataSheet
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Gói D2PAK-3
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Có sẵn4017
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | QFET® |
| Part Status | Last Time Buy |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain(Id) @ 25°C | 1.5A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 10.5Ohm @ 750mA, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 14 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 350 pF @ 25 V |
| Power Dissipation (Max) | 3.13W (Ta), 63W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK (TO-263) |
Tổng quan
Description
For instance, if FQB1P50TM were a semiconductor or electronic component, an introduction might cover its type (e.g., MOSFET, transistor), voltage and current ratings, purpose (e.g., switching, amplification), physical attributes (e.g., package type, pin configuration), and potential applications in circuits or devices. It could also mention the manufacturer or brand's reputation for quality and reliability.
For a detailed introduction, consulting the product's datasheet or manufacturer's website would provide comprehensive specifications and use-case scenarios tailored to the intended audience.
Equivalent
1. IRF9530
2. IRF4905
3. FQP1P50
4. STP12P10
When selecting an equivalent, ensure that the voltage (Vds), current (Id), and package match your requirements, and verify with the datasheet for compatibility.
Features
1. N-Channel MOSFET: It is an N-Channel, enhancing-type MOSFET that allows current flow when a positive voltage is applied to the gate terminal relative to the source.
2. Voltage and Current Ratings: Typically, it has a drain-source voltage (Vds) of 500V and a continuous drain current (Id) capability, often up to 1A, depending on the case temperature.
3. RDS(on): The on-resistance (RDS(on)) is low, which ensures efficient current conduction and minimizes power loss.
4. Package Type: It is available in a TO-220 package, which provides good heat dissipation and easy mounting on printed circuit boards (PCBs).
5. Application Use: Suitable for high-speed switching applications, power supply circuits, and motor controls due to its high voltage and efficiency.
6. Thermal Management: It often has a maximum junction temperature rating up to 150°C, allowing it to operate in high-temperature environments.
These features make it a reliable choice for various power electronic applications.
Pinout
1. Gate (G): This pin controls the MOSFET's on/off state. Applying a voltage difference between the gate and the source (Vgs) allows the MOSFET to conduct between the drain and source.
2. Drain (D): This is the terminal through which the main current flows from the load when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the voltage supply for a P-channel MOSFET.
The FQB1P50TM is used in various applications such as switching regulators, load switches, and other circuits requiring efficient high-speed switching. Its specifications, including maximum current and voltage ratings, should be checked in the datasheet for proper application.
Manufacturer
Application
1. Switching Power Supplies: Utilized in converters and inverters for efficient power management.
2. Motor Control: Employed in driving motors in applications like electric vehicles and industrial machines.
3. Load Switches: Acts as a switch for controlling power to various loads.
4. Lighting Systems: Used in LED drivers and other lighting applications for energy efficiency.
5. Battery Management: Helps in managing power in battery-operated devices, enhancing battery life.
6. Consumer Electronics: Found in devices like TVs, audio systems, and other home appliances for efficient power usage.