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FQB22P10TM
+BOMMOSFET P-CH 100V 22A D2PAK
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Nhà sản xuấtonsemi
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Ông. Phần #FQB22P10TM
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Bảng dữ liệu FQB22P10TM DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | QFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 22A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 125mOhm @ 11A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 50 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 1500 pF @ 25 V |
| Power Dissipation (Max) | 3.75W (Ta), 125W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK (TO-263) |
Tổng quan
Description
Equivalent
1. IRF9540N from Infineon Technologies.
2. FQP27P06 from ON Semiconductor.
3. STP80PF55 from STMicroelectronics.
4. Si7433DP from Vishay.
5. AOI409 from Alpha & Omega Semiconductor.
Ensure to check the datasheets for specific parameters such as Vgs, Id, and Rds(on) to confirm compatibility with your application.
Features
1. Voltage and Current Ratings: It typically handles a maximum drain-source voltage (V_DS) of -100V and a continuous drain current (I_D) up to -22A.
2. R_DS(on): The MOSFET offers a low on-state resistance, which minimizes power loss and improves efficiency. Typical R_DS(on) values are around 0.15 ohms at V_GS = -10V.
3. Package Type: It is commonly available in a TO-263 package, which provides efficient thermal performance.
4. Temperature Range: The device operates within a wide temperature range, generally from -55°C to +150°C, making it suitable for various applications.
5. Applications: It is commonly used in power management, DC-DC converters, and other switching applications due to its high efficiency and fast switching capabilities.
These features make the FQB22P10TM suitable for various electronic applications that require efficient and reliable power management.
Pinout
1. Gate (G): This pin is used to control the conduction state of the MOSFET. A voltage applied to the gate controls the current flow between the source and drain.
2. Drain (D): This is the pin where the current flows out of the transistor. In a P-channel MOSFET, it is connected to the higher voltage.
3. Source (S): This pin is where the current enters the transistor. It is typically connected to ground or a lower voltage in P-channel devices.
The tab is usually connected internally to the drain pin and is used for heat dissipation. The FQB22P10TM is used in applications like switching regulators and power switching circuits, benefiting from its low on-resistance and capability to handle high currents.
Manufacturer
Application
1. Power Management: Used in DC-DC converters and power supply circuits for efficient power regulation and distribution.
2. Load Switching: Acts as a switch in load management systems, enabling control over high-current loads.
3. Battery Protection: Offers overcurrent protection in battery-operated devices, enhancing battery life and safety.
4. Automotive Systems: Utilized in automotive electronics for controlling motors, lighting, and other accessories.
5. Consumer Electronics: Integrated into devices like laptops and smartphones for efficient power control.
The device's low on-resistance and high current capability make it suitable for these applications.